AIMBG120R010M1XTMA1 vs IMLT65R040M2HXTMA1 Comparison
Detailed side-by-side comparison of AIMBG120R010M1XTMA1 by Infineon and IMLT65R040M2HXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
AIMBG120R010M1XTMA1
AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon
AIMBG120R010M1XTMA1 ✓ ActiveInfineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ ActiveSpecification Comparison
| Parameter | AIMBG120R010M1XTMA1 | IMLT65R040M2HXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.90 | $4.25 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G1 Automotive SiC Trench MOSFET | CoolSiC™ G2 (2nd generation SiC trench) |
| Technology | Silicon Carbide (SiC) Trench MOSFET | Silicon Carbide (SiC) N-channel MOSFET |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 1200 V | 650 V |
| Continuous Drain Current (ID, Tc) | 205 A | — |
| On-Resistance RDS(on), typ | 8.7 mΩ | — |
| Power Dissipation (PD, Tc) | 882 W | — |
| Package | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount | PG-HDSOP-16-6 (surface mount, top-side-cooled) |
| Operating Junction Temperature | -55°C to +175°C | -55 °C to +150 °C |
| Automotive Qualification | AEC-Q101 | — |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 7 + Tab | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | — |
| Continuous Drain Current (ID, TC) | — | 57 A |
| Pulsed Drain Current (ID,pulse) | — | 143 A |
| On-State Resistance RDS(on) (typ, VGS=18V) | — | 40 mΩ |
| On-State Resistance RDS(on) (max, VGS=18V) | — | 49 mΩ |
| Total Gate Charge QG | — | 28 nC |
| Output Charge QOSS @ 400 V | — | 53 nC |
| Output Energy EOSS @ 400 V | — | 7.2 µJ |
| Continuous Drain Power Dissipation (PD, TC) | — | 268 W |
| Recommended Gate Drive Voltage VGS | — | 18 V (turn-off: 0 V or negative) |
| Qualification | — | JEDEC industrial |
| Packaging | — | Tape & Reel |
| Special Features | — | Kelvin source pin, low reverse-recovery charge, hard-switching optimized |