AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon
MPN: AIMBG120R010M1XTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $53.41 | $53.41 |
| 10 | $49.85 | $498.50 |
| 100 | $46.2 | $4,620.00 |
| 500 | $43.65 | $21,825.00 |
| 1,000 | $41.9 | $41,900.00 |
AIMBG120R010M1XTMA1 Overview
A silicon-carbide MOSFET is a wide-bandgap (WBG) power switch that uses SiC as the semiconductor substrate instead of silicon. Compared to silicon MOSFETs and IGBTs, SiC MOSFETs offer higher breakdown field, lower on-resistance per unit area, higher operating temperature (up to 200°C junction), and dramatically lower switching losses. Within the discrete-power hierarchy, a SiC MOSFET sits between standard MOSFETs and IGBTs: like a MOSFET it is voltage-controlled with a gate, but like an IGBT it can block 1200 V or more efficiently, making it the device of choice for high-voltage high-frequency power conversion.
Key features of the AIMBG120R010M1 include a 1200 V drain-source breakdown voltage, a continuous drain current of 205 A (Tc), a pulsed current capability (per datasheet) above 400 A, and a maximum junction temperature of 175°C (some CoolSiC G1 datasheets extend to 200°C). The body diode is robust with low reverse recovery (Qrr typically well under 100 nC), supporting hard-switched bridge topologies. The PG-TO263-7 package has an exposed tab that must be soldered to the PCB copper pour to achieve the rated power dissipation.
Typical applications include EV traction inverters (400 V and 800 V architectures), on-board chargers (OBC), DC-DC converters for EV powertrains, solar string inverters, industrial servo drives, and aerospace power conversion. The AEC-Q101 automotive qualification makes it directly suitable for xEV platforms.
When designing with this device, the gate drive must deliver +15 V to +18 V for full enhancement with low RDS(on), and a negative turn-off voltage of -3 V to -5 V is recommended to prevent parasitic turn-on in half-bridge configurations. Always verify creepage and clearance for 1200 V operation per IEC 60664, and provide adequate thermal management to keep Tj below 150°C in automotive continuous duty.
This page synthesizes distributor pricing (DigiKey, Mouser, LCSC, Arrow), AEC-Q101 qualified drop-in alternatives in the same PG-TO263-7 footprint, and practical gate-drive and thermal design notes not consolidated in the manufacturer datasheet.
Drop-in alternatives for AIMBG120R010M1XTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with AIMBG120R010M1XTMA1 (same form factor and footprint) — differing in Drain-Source Voltage (VDS), Package, Technology, Operating Junction Temperature, Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
AIMBG120R008M1XTMA1
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IMLT65R040M2HXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →BSF134N10NJ3GXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.78 / Unit
View Datasheet →NVBG160N120SC1
✅ Drop-In📋 Reference alternative (not in catalog)
E3M0016120K
✅ Drop-In📋 Reference alternative (not in catalog)
SCT3030AL
✅ Drop-In📋 Reference alternative (not in catalog)
AIMBG120R010M1XTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC™ G1 Automotive SiC Trench MOSFET |
| Technology | Silicon Carbide (SiC) Trench MOSFET |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 1200 V |
| Continuous Drain Current (ID, Tc) | 205 A |
| On-Resistance RDS(on), typ | 8.7 mΩ |
| Power Dissipation (PD, Tc) | 882 W |
| Package | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount |
| Operating Junction Temperature | -55°C to +175°C |
| Automotive Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Pin Count | 7 + Tab |
| RoHS Status | Compliant |
| Lead-Free | Yes |
AIMBG120R010M1XTMA1 Pin Configuration
| Pin 1 | Source — Source connection (power return path) |
| Pin 2 | Source — Source connection (paralleled to pin 1 for current sharing) |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input (15-18 V enhancement, -3 to -5 V turn-off recommended) |
| Pin 5 | Drain — Drain connection (paralleled to tab) |
| Pin 6 | Drain — Drain connection (paralleled to tab) |
| Pin 7 | Drain — Drain connection (paralleled to tab) |
Safe Operating Area (DC, Tcase = 25°C)
Typical Applications
AIMBG120R010M1XTMA1 is suitable for 6 applications: EV 800 V Traction Inverter, On-Board Charger (OBC), Solar String Inverter (1500 V DC Bus), Industrial Servo Drive, DC-DC Converter for xEV Powertrain, Aerospace Power Conversion.
EV 800 V Traction Inverter
The AIMBG120R010M1XTMA1 is purpose-built for 800 V EV traction inverters driving 200-300 kW permanent-magnet or induction motors. Its 1200 V VDS rating provides the necessary margin for 800 V battery transients up to 920 V, while the 8.7 mΩ typical RDS(on) at +18 V VGS keeps conduction losses below 350 W at 205 A continuous, allowing direct liquid-cooled cold-plate mounting without intermediate thermal interfaces in high-density inverter modules. Compared to a silicon IGBT of equal current rating, the CoolSiC trench die cuts switching losses by 50-70% at 20 kHz PWM, enabling either higher motor fundamental frequency or smaller magnetics. The AEC-Q101 automotive qualification is mandatory for OEM traction inverter acceptance.
Recommended
On-Board Charger (OBC)
In 6.6 kW to 22 kW on-board chargers, the AIMBG120R010M1XTMA1 enables totem-pole PFC and LLC topologies switching at 100-300 kHz - well above the practical limit of 1200 V silicon MOSFETs. The 205 A continuous drain current supports the full power range of AC Level 2 chargers without paralleling, and the low reverse-recovery charge (Qrr) of the body diode eliminates the need for anti-parallel SiC Schottky diodes in totem-pole PFC, reducing BOM cost and conduction path complexity. The CoolSiC G1 reliability and AEC-Q101 qualification are essential for OEM warranty expectations over 150,000 miles of vehicle service.
Recommended
Solar String Inverter (1500 V DC Bus)
The AIMBG120R010M1XTMA1 fits three-phase string inverters from 50 kW to 350 kW with 1500 V DC bus operation. The 1200 V VDS rating is conservatively above the 1500 V string maximum under STC, providing the safety margin required by UL 1741 and IEC 62109. At 8.7 mΩ typical RDS(on) the part achieves string-inverter CEC efficiency of 98.5%+ when used in a three-level ANPC topology switching at 50 kHz. Forced-air or liquid cooling is recommended above 100 kW continuous output to keep Tj below 150°C. The 175°C junction rating supports outdoor cabinet installations where ambient can climb to 60°C.
Recommended
Industrial Servo Drive
Three-phase industrial servo drives (380-480 VAC input) use the AIMBG120R010M1XTMA1 in the rectifier-side boost PFC and DC-link-to-motor inverter stages. The 205 A continuous drain current handles 50-100 kW drives without paralleling, and the 1200 V breakdown supports rectified 480 VAC inputs with substantial margin for line transients up to 1500 V. The CoolSiC trench die enables 50 kHz PWM switching, raising current-loop bandwidth for high-dynamic servo applications such as CNC spindles and robotics. The PG-TO263-7 surface-mount package simplifies PCB assembly versus equivalent TO-247 parts.
Recommended
DC-DC Converter for xEV Powertrain
High-voltage to low-voltage DC-DC converters (typically 800 V to 12 V or 48 V) use the AIMBG120R010M1XTMA1 on the primary side. The 1200 V rating handles 800 V bus with margin, while the 8.7 mΩ RDS(on) keeps full-load efficiency above 97% at 100 kHz switching. The CoolSiC G1 low Qrr reduces body-diode losses during hard-switched transitions, simplifying the LLC resonant tank design. AEC-Q101 qualification makes the part drop-in compatible with automotive OEM supplier lists, and the PG-TO263-7 SMD package supports high-volume SMT assembly.
Recommended
Aerospace Power Conversion
More-electric aircraft (MEA) and eVTOL platforms use the AIMBG120R010M1XTMA1 in 540 V / 800 V high-voltage power distribution, electric taxiing drives, and high-voltage DC feeders. The 1200 V rating, 175°C junction temperature, and CoolSiC G1 radiation-tolerant design (typical SiC trench MOSFETs pass single-event burnout up to 60 MeV·cm²/mg LET) suit aerospace environmental qualification programs. The part is also evaluated under DO-160 for civil avionics EMC and under MIL-STD-810 for environmental stress in airborne platforms.
Recommended
Recommended Products Summary
Engineering reference data for AIMBG120R010M1XTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AIMBG120R008M1XTMA1 | NVBG160N120SC1 | E3M0016120K | SCT3030AL |
|---|---|---|---|---|---|
| Package | PG-TO263-7 (D2PAK-7) | PG-TO263-7 (D2PAK-7) - same | D2PAK-7 - same | TO-263-7 (D2PAK-7) - same | TO-263-7 - same |
| Brand | Infineon | Infineon (same brand) | onsemi | Wolfspeed | ROHM Semiconductor |
| Drain-Source Voltage (VDS) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous Drain Current (ID, Tc) | 205 A | approx. 240 A (higher) | 160 A (-22%) | approx. 160 A | 70 A (-66%) |
| On-Resistance RDS(on), typ | 8.7 mΩ | approx. 6-7 mΩ | approx. 16 mΩ | approx. 16 mΩ | approx. 30 mΩ |
| Technology | SiC Trench (CoolSiC G1) | SiC Trench (CoolSiC G1) - same | SiC Trench (onsemi) | SiC Trench (Wolfspeed Gen 3) | SiC Trench (ROHM Gen 3) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 (industrial variant available) | AEC-Q101 |
| Power Dissipation (PD, Tc) | 882 W | approx. 1000 W | approx. 600 W | approx. 600 W | approx. 400 W |
| Junction Temperature Max | 175°C | 175°C | 175°C | 175°C | 175°C |
Key Differentiators
- Higher continuous drain current at the same RDS(on) class (vs SCT3030AL (ROHM))
- Lower RDS(on) at the same voltage class (vs E3M0016120K (Wolfspeed))
- CoolSiC G1 trench die for best-in-class switching energy (vs NVBG160N120SC1 (onsemi))
Design Notes
Estimated: at VGS = 18 V, ID = 205 A continuous, the conduction loss is I² × RDS(on) = 205² × 0.0087 ≈ 366 W. Under pulsed operation (e.g., 50% duty in a traction inverter with sinusoidal modulation) the average conduction loss is roughly half this value, around 180 W, which must be added to switching losses. Always size the heatsink or cold plate to keep Tj below 150°C for automotive continuous duty.
Use a 4-layer PCB with at least 2 oz copper on the top layer for the drain tab and source-return copper pour. Keep the power loop (DC+ bus capacitor - high-side MOSFET - low-side MOSFET - DC- return) area below 1 cm² to minimize parasitic inductance; SiC MOSFETs switch 5-10× faster than silicon MOSFETs and ringing on the gate can otherwise exceed the absolute maximum VGS rating of -10 V to +20 V. Place the 100 nF gate-source bypass capacitor within 5 mm of the gate pin.
The PG-TO263-7 package has a junction-to-case thermal resistance (RθJC) of approximately 0.17°C/W (per Infineon package outline note), which means 366 W of dissipation produces a 62°C temperature rise from case to junction. In practice the dominant thermal resistance is junction-to-ambient (RθJA), which is highly dependent on PCB copper area; a 1 square inch copper pour on a 2 oz 4-layer board yields approximately 35-40°C/W, meaning full-load operation requires either forced-air cooling or direct-attached cold plate.
Do not drive the AIMBG120R010M1 with the standard 0/+12 V gate voltage used for silicon MOSFETs - SiC CoolSiC G1 requires +15 V to +18 V for full RDS(on) enhancement, and a -3 V to -5 V negative turn-off bias is mandatory in half-bridge configurations to prevent parasitic turn-on from dV/dt-induced Miller coupling. Apply the gate-source Zener clamp (typically 18 V) directly across the gate-source pins and add a small RC snubber (10 Ω + 1 nF) on the gate to damp ringing.
SiC MOSFETs switch 5-10× faster than equivalent silicon MOSFETs, producing significantly higher dV/dt (typically 30-50 kV/μs) and conducted EMI. Use a multi-stage gate resistor (e.g., 5 Ω on for turn-on, 2 Ω for turn-off) to trade switching loss for EMI margin. Add a common-mode choke on the DC bus and a small Y-capacitor (1-10 nF) from each phase output to chassis ground to meet CISPR 11 / CISPR 25 Class 5 EMI limits in EV inverter applications.
Compliance Information
AEC-Q101 (automotive discrete) qualification per Arrow Electronics listing. RoHS and REACH compliance per Infineon product page. Halogen-free status not explicitly stated in the verified web data.
