AS4C512M16D4-75BCN vs K4A8G165WB-BCWE Comparison

Detailed side-by-side comparison of AS4C512M16D4-75BCN by Alliance Memory and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4-75BCN

AS4C512M16D4-75BCN - 8Gb DDR4 SDRAM 2666MT/s | Alliance Memory

AS4C512M16D4-75BCN βœ“ Active
Samsung Electronics
K4A8G165WB-BCWE

K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

K4A8G165WB-BCWE βœ“ Active

Specification Comparison

Parameter AS4C512M16D4-75BCN K4A8G165WB-BCWE
Brand Alliance Memory Samsung Electronics
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.75 $6.55
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gbit 8 Gb
Organization 512M x 16 512M x 16
Data Rate 2666 MT/s (DDR4-2666) 3200 Mbps
Clock Frequency 1.333 GHz β€”
Supply Voltage 1.2 V 1.2 V
CAS Latency 18 β€”
Access Time 18 ns β€”
Number of Banks 16 β€”
Prefetch Architecture 8n β€”
Interface Parallel Parallel
Package 96-FBGA (7.5 mm x 13 mm) 96FBGA
Operating Temperature Range 0C to +95C (Commercial) β€”
Mounting Type Surface Mount (FBGA) Surface Mount
Packaging Tray β€”
Refresh Modes Auto-refresh, Self-refresh β€”
On-Die Termination Yes (ODT) β€”
RoHS Status [DATA_NEEDED: RoHS status] Compliant
Standby Power [DATA_NEEDED: standby power] β€”
Access Time (CAS Latency) β€” 19 ns
Operating Temperature β€” 0C to +85C
Burst Length β€” 8
Bank Group Architecture β€” Yes
On-Die Termination (ODT) β€” Yes, dynamic ODT with ZQ calibration
Functions β€” Auto precharge, asynchronous reset, CRC, data mask
Lead Free β€” Yes

Datasheets & Resources

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