AS4C512M16D4-75BCN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
MPN: AS4C512M16D4-75BCN ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $10.11 | $10.11 |
| 10 | $9.5 | $95.00 |
| 100 | $8.9 | $890.00 |
| 500 | $8.2 | $4,100.00 |
| 1,000 | $7.5 | $7,500.00 |
Drop-in alternatives for AS4C512M16D4-75BCN — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →AS4C512M16D4-75BCN Maximum Ratings & Electrical Characteristics
| Memory Type | SDRAM - DDR4 |
| Memory Size | 8 Gbit |
| Organization | 512M x 16 |
| Data Rate | 2666 MT/s |
| Clock Frequency | 1.333 GHz |
| CAS Latency | 18 ns |
| Supply Voltage | 1.2 V |
| Package | 96-FBGA (7.5x13) |
| Operating Temperature | 0°C to +95°C |
| Mounting Type | Surface Mount |
| Interface | Parallel |
| Banks | 16 |
| Prefetch | 8n |
| RoHS Status | Compliant |
| Packaging | Tray |
AS4C512M16D4-75BCN Pin Configuration
| Pin A1 | VDD — Power supply (1.2V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin B1 | DQ2 — Data input/output 2 |
| Pin B2 | DQ3 — Data input/output 3 |
| Pin B3 | VDD — Power supply (1.2V) |
| Pin B4 | DQ4 — Data input/output 4 |
| Pin C1 | DQ5 — Data input/output 5 |
| Pin C2 | VSS — Ground |
| Pin C3 | DQ6 — Data input/output 6 |
| Pin C4 | DQ7 — Data input/output 7 |
| Pin D1 | VDD — Power supply (1.2V) |
| Pin D2 | DQ8 — Data input/output 8 |
| Pin D3 | DQ9 — Data input/output 9 |
| Pin D4 | VSS — Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
AS4C512M16D4-75BCN is suitable for 6 applications: Server Memory, Networking Equipment, Industrial Computing, Embedded Systems, Telecommunications, Test & Measurement.
Server Memory
The AS4C512M16D4-75BCN provides high-density 8Gb DDR4 memory for server applications, offering 2666 MT/s data rate and 1.2V operation. Its 512Mx16 organization supports wide data buses, enabling high bandwidth for multi-core processors. The 96-FBGA package allows compact board designs, while the 16-bank architecture improves memory access efficiency. This makes it ideal for cloud computing, database servers, and virtualization platforms where memory capacity and speed are critical.
Recommended
Networking Equipment
In networking equipment such as routers, switches, and firewalls, the AS4C512M16D4-75BCN provides fast, reliable memory for packet buffering and routing tables. Its 2666 MT/s data rate ensures low latency, while the 8Gb density supports large forwarding databases. The 1.2V operation reduces power consumption in always-on network devices. The 96-FBGA package is suitable for space-constrained line cards, and the commercial temperature range covers typical operating environments.
Recommended
Industrial Computing
The AS4C512M16D4-75BCN is well-suited for industrial computing applications like PLCs, HMI panels, and embedded PCs. Its 8Gb capacity supports complex control algorithms and data logging, while the 2666 MT/s speed ensures responsive operation. The 1.2V supply is compatible with modern industrial power rails, and the 96-FBGA package withstands vibration in harsh environments. The commercial temperature range (0°C to +95°C) is adequate for most factory floor conditions.
Recommended
Embedded Systems
For embedded systems like single-board computers and IoT gateways, the AS4C512M16D4-75BCN offers high memory density in a compact 96-FBGA package. Its 512Mx16 organization provides a wide data path for efficient data transfer, and the 1.2V operation minimizes power draw in battery-powered devices. The 2666 MT/s data rate supports real-time processing, while the 16-bank architecture enhances memory bandwidth. This makes it ideal for edge computing and AI inference at the edge.
Recommended
Telecommunications
In telecommunications infrastructure like base stations and optical transport equipment, the AS4C512M16D4-75BCN provides reliable, high-speed memory for signal processing and protocol handling. Its 8Gb density supports large buffers for high-throughput data, and the 2666 MT/s speed meets the demands of 5G and beyond. The 1.2V operation reduces heat generation in densely packed equipment, and the 96-FBGA package is suitable for compact line cards.
Recommended
Test & Measurement
The AS4C512M16D4-75BCN is used in test and measurement equipment like oscilloscopes and logic analyzers, where high-speed data acquisition requires large, fast memory. Its 2666 MT/s data rate enables rapid waveform capture, and the 8Gb capacity stores long records. The 1.2V supply is compatible with precision power designs, and the 96-FBGA package allows dense PCB layouts. The commercial temperature range is suitable for benchtop instruments.
Recommended
Recommended Products Summary
Engineering reference data for AS4C512M16D4-75BCN — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AS4C512M16D4A-62BCN | AS4C512M16D4-75BIN | MT40A512M16JY-075E |
|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same | 96-FBGA (7.5x13) - same |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 2666 MT/s | 3200 MT/s | 2666 MT/s | 2666 MT/s |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | 18 ns | [DATA_NEEDED] | 18 ns | [DATA_NEEDED] |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C |
Key Differentiators
- Higher data rate option (vs AS4C512M16D4-75BCN)
- Industrial temperature range (vs AS4C512M16D4-75BCN)
- Cross-brand availability (vs MT40A512M16JY-075E)
Design Notes
The AS4C512M16D4-75BCN requires a stable 1.2V supply. Use a low-dropout regulator or a dedicated DDR4 power management IC to provide clean power. Place 0.1uF and 1uF decoupling capacitors close to each VDD pin to minimize noise and ensure reliable operation at 2666 MT/s.
For 2666 MT/s DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within +/- 10 mils to minimize skew. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.
The AS4C512M16D4-75BCN operates up to +95°C. Ensure adequate airflow or a heatsink in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values and design accordingly to keep the junction temperature within limits.
Compliance Information
RoHS compliance is indicated by Alliance Memory's product page. Other compliance details are not specified in the provided data.