AS4C512M16D4-75BIN vs MT40A512M16JY-07EAIT:B Comparison

Detailed side-by-side comparison of AS4C512M16D4-75BIN by Alliance Memory and MT40A512M16JY-07EAIT:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4-75BIN

AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4-75BIN βœ“ Active
Micron Technology
MT40A512M16JY-07EAIT:B

MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B βœ“ Active

Specification Comparison

Parameter AS4C512M16D4-75BIN MT40A512M16JY-07EAIT:B
Brand Alliance Memory Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.99 $8.10
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit 8 Gbit
Memory Organization 512M x 16 β€”
Clock Frequency 1.333 GHz 1.33 GHz
Access Time 18 ns β€”
Write Cycle Time 15 ns β€”
Supply Voltage 1.2 V β€”
Package 96-FBGA (7.5x13) 96-FBGA (8x14)
Operating Temperature -40Β°C to +95Β°C β€”
Mounting Type Surface Mount β€”
Interface POD Parallel
Data Rate 2666 Mbps 2666 MT/s
Number of Pins 96 β€”
RoHS Status Compliant β€”
Features Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration β€”
Organization β€” 512M x 16
Supply Voltage (VDD/VDDQ) β€” 1.2V Β±60mV
VPP Voltage β€” 2.5V, -125mV, +250mV
Operating Temperature Range β€” -40Β°C to +105Β°C (AIT grade)
Refresh Time β€” 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C
I/O Type β€” 1.2V pseudo open-drain
VREFDQ β€” On-die, internal, adjustable
AEC-Q100 β€” Qualified (AIT suffix)
RoHS β€” Compliant

Datasheets & Resources

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