AS4C512M16D4A-62BCNTR vs MT40A512M16TB-062E Comparison

Detailed side-by-side comparison of AS4C512M16D4A-62BCNTR by Alliance Memory and MT40A512M16TB-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Alliance Memory
AS4C512M16D4A-62BCNTR

AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4A-62BCNTR βœ“ Active
Micron Technology
MT40A512M16TB-062E

MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16TB-062E βœ“ Active

Specification Comparison

Parameter AS4C512M16D4A-62BCNTR MT40A512M16TB-062E
Brand Alliance Memory Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $60.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (512M x 16) 8 Gbit
Supply Voltage 1.14V ~ 1.26V (nominal 1.2V) β€”
Clock Rate 1600 MHz (DDR4-3200) β€”
CAS Latency 18 ns β€”
Package 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13 mm)
Operating Temperature 0Β°C to +95Β°C (Commercial) β€”
Interface POD (Pseudo Open Drain) Parallel
Data Rate 3200 MT/s 1600 MHz (DDR4-3200)
Refresh Auto-refresh and self-refresh β€”
RoHS Compliant β€”
Moisture Sensitivity Level 3 (168 Hours) β€”
Write Cycle Time - Word, Page 15 ns β€”
Mounting Type Surface Mount Surface Mount
Standard Pack 1500/reel (Tape & Reel) β€”
Organization β€” 512M x 16
Supply Voltage - VDD/VDDQ β€” 1.2V Β±60mV
Supply Voltage - VPP β€” 2.5V, -125mV, +250mV
tRCD β€” 19 ns
Refresh Time β€” 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C
Operating Temperature Range β€” 0Β°C to +95Β°C (standard), -40Β°C to +95Β°C (IT)
Features β€” Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration
RoHS Status β€” Compliant
REACH Status β€” Compliant

Datasheets & Resources

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