BAT42 vs BAT43 Comparison
Detailed side-by-side comparison of BAT42 by STMicroelectronics and BAT43 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
STMicroelectronics
BAT42
BAT42 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
BAT42 β ActiveSTMicroelectronics
BAT43
BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
BAT43 β ActiveSpecification Comparison
| Parameter | BAT42 | BAT43 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.02 | $0.08 |
| Diode Type | Small Signal Schottky Barrier | β |
| Repetitive Reverse Voltage (VRRM) | 30 V | β |
| Average Forward Current (IF(AV)) | 200 mA | β |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | β |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | β |
| Junction Operating Temperature | up to 125 C | β |
| Switching Speed | Fast (Schottky, no reverse recovery) | β |
| Package | DO-35 axial through-hole | DO-35 (glass axial, through-hole) |
| Configuration | Single diode | Single diode |
| Technology | Metal-to-silicon Schottky junction with guard ring ESD protection | Metal-to-silicon Schottky barrier |
| Mounting Type | Through Hole | Through Hole |
| Application Class | General purpose fast switching | β |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Manufacturer | STMicroelectronics | β |
| Device Type | β | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | β | 30 V |
| Forward Continuous Current (IF) | β | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | β | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | β | 4 A (tp = 10 ms) |
| Power Dissipation (Ptot) | β | 200 mW at Tl = 65 C |
| ESD Protection | β | Integrated guard ring against excessive voltage |
| Forward Voltage | β | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | β | [DATA_NEEDED: reverse leakage current] |
| Case Style | β | Hermetically sealed glass body |
| Operating Temperature | β | [DATA_NEEDED: operating temperature range] |