BAT42 vs BAT43 비교

다음의 상세 나란히 비교: BAT42 제조: STMicroelectronics 및 BAT43 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BAT42 BAT43
브랜드 STMicroelectronics STMicroelectronics
카테고리 Diodes Diodes
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.02 $0.08
Diode Type Small Signal Schottky Barrier —
Repetitive Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA —
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Operating Temperature up to 125 C —
Switching Speed Fast (Schottky, no reverse recovery) —
패키지 DO-35 axial through-hole DO-35 (glass axial, through-hole)
Configuration Single diode Single diode
Technology Metal-to-silicon Schottky junction with guard ring ESD protection Metal-to-silicon Schottky barrier
실장 유형 Through Hole Through Hole
Application Class General purpose fast switching —
RoHS 상태 [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Manufacturer STMicroelectronics —
Device Type — Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
전력 손실 (Ptot) — 200 mW at Tl = 65 C
ESD Protection — Integrated guard ring against excessive voltage
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
동작 온도 — [DATA_NEEDED: operating temperature range]

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