BAT42 vs BAT43-R0 Comparison

Detailed side-by-side comparison of BAT42 by STMicroelectronics and BAT43-R0 by Taiwan Semiconductor. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Taiwan Semiconductor
BAT43-R0 BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor

BAT43-R0 ✓ Active

Specification Comparison

Parameter BAT42 BAT43-R0
Brand STMicroelectronics Taiwan Semiconductor
Category Diodes Diodes
Lifecycle Status Active Active
Diode Type Small Signal Schottky Barrier Small Signal Schottky Barrier
Repetitive Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA 200 mA
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A 4 A
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Junction Operating Temperature up to 125 C -65C to +125C
Switching Speed Fast (Schottky, no reverse recovery) —
Package DO-35 axial through-hole DO-35 axial glass (through hole)
Configuration Single diode Single diode
Technology Metal-to-silicon Schottky junction with guard ring ESD protection —
Mounting Type Through Hole Through Hole
Application Class General purpose fast switching —
RoHS Status [DATA_NEEDED: RoHS compliance status] Compliant
Manufacturer STMicroelectronics —
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Maximum Forward Voltage (VF) — 1 V
Power Dissipation — 200 mW
Reverse Recovery — Fast switching (Schottky, majority carrier)
ESD Protection — Fast guard ring against excessive voltage (ESD)
Forward Voltage Turn-On — Very low turn-on voltage
Capacitance (Cj) — [DATA_NEEDED: junction capacitance]
Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Packaging Type — [DATA_NEEDED: tape/reel or bulk option]

Datasheets & Resources

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