BC817-40,215 vs BC817-40 Comparison

Detailed side-by-side comparison of BC817-40,215 by Nexperia and BC817-40 by Nexperia. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nexperia
BC817-40,215 BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 ✓ Active

Specification Comparison

Parameter BC817-40,215 BC817-40
Brand Nexperia Nexperia
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.05 $0.02
Transistor Type NPN Bipolar (BJT) NPN Bipolar Junction Transistor (BJT)
Package SOT-23 (TO-236AB) SOT-23 (TO-236AB), 3 pins
Mounting Type Surface Mount Surface Mount
Collector-Emitter Voltage (Vceo) 45 V 45 V
Collector-Base Voltage (Vcbo) 50 V 50 V
Emitter-Base Voltage (Vebo) 5 V 5 V
Continuous Collector Current (IC) 500 mA 500 mA
Peak Collector Current (ICM) [DATA_NEEDED: peak collector current] [DATA_NEEDED: ICM value]
Power Dissipation (Ptot) 250 mW —
Transition Frequency (ft) 100 MHz 100 MHz
DC Current Gain (hFE) - BC817-40 bin 250 to 600 (at IC=100mA, VCE=1V) —
Operating Temperature Range -65 C to +150 C (TJ) —
JEDEC Package Standard TO-236AB —
Pin Configuration Pin 1 Base / Pin 2 Emitter / Pin 3 Collector —
RoHS Compliance Compliant —
Lead-Free Reflow Yes (260 C peak per J-STD-020) —
Total Power Dissipation (Ptot) — 310 mW
DC Current Gain (hFE) - -40 bin — 250 to 600 (at 100 mA, 1 V)
Collector-Emitter Saturation Voltage (VCEsat) — 700 mV max (at 500 mA, 50 mA base)
Base-Emitter Voltage (VBE) — [DATA_NEEDED: VBE typical]
Operating Junction Temperature — -65 C to +150 C
MSL Level — 1
RoHS Status — Compliant
Complementary PNP Part — BC807-40

Datasheets & Resources

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