BGA7L1N6E6327XT vs BGA7L1N6E6327XTSA1 Comparison
Detailed side-by-side comparison of BGA7L1N6E6327XT by Infineon and BGA7L1N6E6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BGA7L1N6E6327XT | BGA7L1N6E6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.42 |
| Type | Low Noise Amplifier (LNA) MMIC | — |
| Technology | Silicon Germanium (SiGe) | Silicon Germanium (SiGe) |
| Frequency Range | 728 MHz to 960 MHz | 728 MHz to 960 MHz |
| Insertion Power Gain | 13.3 dB | 13.3 dB (typical) |
| Noise Figure (NF) | 0.90 dB | — |
| Supply Voltage | 1.5 V to 3.3 V | 1.5 V to 3.3 V |
| Supply Current | 4.4 mA (typical) | 4.4 mA (typical) |
| Control Logic | Digital on/off switch, 1 V logic level | Digital on/off switch, 1 V logic-high enable |
| Package | TSNP-6-2 (leadless) | TSNP-6-2 (PG-TSNP-6-2), 0.7 mm x 1.1 mm |
| Package Footprint | 0.7 mm x 1.1 mm | — |
| Operating Temperature Range | -40C to +85C | — |
| Mounting Type | Surface Mount | Surface Mount |
| Topology | Single-stage with on-chip matching and bypass | — |
| Application Band | LTE Band 8 / 12 / 13 / 20 (sub-1 GHz) | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BGA7L1N6E6327XTSA1 |
| Function | — | RF Low Noise Amplifier (LNA) MMIC |
| Noise Figure | — | 0.90 dB (typical) |
| Input/Output Impedance | — | Internally matched to 50 ohm |
| Operating Temperature | — | -40 C to +85 C |
| Standard Pack Quantity | — | 15,000 (reel) |
| Target Application | — | LTE low-band (700/800/900 MHz) receiver front-end |