BSC014N06NSATMA1 vs IPD090N03LGATMA1 Comparison

Detailed side-by-side comparison of BSC014N06NSATMA1 by Infineon and IPD090N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N06NSATMA1 BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 βœ“ Active
Infineon
IPD090N03LGATMA1 IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon

IPD090N03LGATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N06NSATMA1 IPD090N03LGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.34
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 60 V β€”
Gate-Source Voltage (VGS) Max +/- 20 V β€”
Continuous Drain Current (ID) at Ta 30 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) Typ @ VGS=10V 1.4 mOhm β€”
On-Resistance RDS(on) Max @ VGS=10V 1.45 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 156 W β€”
Operating Temperature Range -55C to +150C -55C to +175C (junction)
Package PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (unlimited)
RoHS Status Compliant Compliant
Technology OptiMOS 5 (shielded-gate trench) β€”
FET Type β€” N-Channel
Drain-Source Voltage (Vdss) β€” 30 V
Continuous Drain Current (Id) @ Tc=25C β€” 40 A
Continuous Drain Current (Id) @ Tc=100C β€” [DATA_NEEDED: Id at 100C]
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed Id]
Maximum Power Dissipation (Pd) @ Tc=25C β€” 42 W
On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A β€” 9 mOhm (typical)
On-State Resistance (Rds(on)) @ Vgs=4.5V β€” [DATA_NEEDED: Rds(on) at 4.5V]
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg total]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) β€” [DATA_NEEDED: Qrr]
Technology Family β€” OptiMOS 30V
Configuration β€” Single

Datasheets & Resources

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