BSC014N06NSATMA1 vs IPD090N03LGATMA1 Comparaison
Comparaison détaillée côte à côte de BSC014N06NSATMA1 par Infineon et IPD090N03LGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC014N06NSATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,89 | $0,34 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.45 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 156 W | — |
| Plage de température de fonctionnement | -55C to +150C | -55C to +175C (junction) |
| Boîtier | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TO252-3-11 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 | 1 (unlimited) |
| Statut RoHS | Compliant | Compliant |
| Technology | OptiMOS 5 (shielded-gate trench) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | — | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | — | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | — | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | — | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Technology Family | — | OptiMOS 30V |
| Configuration | — | Single |