BSC019N08NS5ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC019N08NS5ATMA1
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC019N08NS5ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | β |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25C | 28 A | β |
| Continuous Drain Current (ID) at TC=25C | 237 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation (TA=25C) | 3 W | β |
| Power Dissipation (TC=25C) | 214 W | β |
| Operating Temperature Range | -55 C to +150 C | -55C to +175C |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | MSL1 (260C peak reflow) |
| RoHS Status | Compliant | Compliant (Green Product) |
| Avalanche Rated | Yes | β |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |