BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
MPN: BSC019N08NS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.28 | $3.28 |
| 10 | $2.95 | $29.50 |
| 100 | $2.61 | $261.00 |
| 500 | $2.32 | $1,160.00 |
| 1,000 | $2.05 | $2,050.00 |
| 5,000 | $1.78 | $8,900.00 |
Drop-in alternatives for BSC019N08NS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC0901NSIATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC014NE2LSIATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →BSZ0901NSIATMA1
✅ Drop-In✓ In Stock
$0.34 / Unit
View Datasheet →BSZ0501NSIATMA1
✅ Drop-In✓ In Stock
$0.29 / Unit
View Datasheet →BSC0502NSIATMA1
✅ Drop-In✓ In Stock
$0.85 / Unit
View Datasheet →BSC019N08NS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) max | 80 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID) at TA=25C | 28 A |
| Continuous Drain Current (ID) at TC=25C | 237 A |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | 3.0 V |
| Power Dissipation (TA=25C) | 3 W |
| Power Dissipation (TC=25C) | 214 W |
| Operating Temperature Range | -55 C to +150 C |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Avalanche Rated | Yes |
BSC019N08NS5ATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source (NC tab in some datasheet revisions) |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
| Pin EP | D — Drain (exposed pad, primary thermal and electrical connection) |
Safe Operating Area (DC, TC=25C)
Typical Applications
BSC019N08NS5ATMA1 is suitable for 6 applications: 48 V to Point-of-Load Synchronous Rectifier, Hot-Swap and OR-ing Controller in Telecom Shelves, Industrial 24 V to 48 V Motor Drive Half-Bridge, e-Mobility and Battery Protection Switch, Solar Inverter Boost Stage Switch, Server and Datacenter 12 V Hot-Swap Switch.
48 V to Point-of-Load Synchronous Rectifier
The BSC019N08NS5ATMA1 is well-suited for the low-side synchronous rectifier position in 48 V-to-low-voltage buck converters commonly used in telecom and datacom shelves. With 1.9 mOhm RDS(on) at 10 V VGS and 80 V drain-source rating, it carries 50 A continuous with conduction loss under 5 W per device, while the OptiMOS 5 trench cell keeps switching loss low at 200 kHz to 500 kHz switching frequency. Placed adjacent to the high-side MOSFET with minimized source-loop inductance, it forms a compact half-bridge that drops into standard SuperSO8 PCB footprints.
Recommended
Hot-Swap and OR-ing Controller in Telecom Shelves
In 48 V telecom and datacom hot-swap and OR-ing applications, the BSC019N08NS5ATMA1 acts as the main pass MOSFET that connects a -48 V or +48 V bus to the load. The 80 V breakdown withstands the worst-case transient on a properly clamped -48 V bus, while 1.9 mOhm RDS(on) keeps load-step dissipation under 2 W at 30 A continuous. Its 28 A TA-rated current handles sustained inrush of typical line-card loads, and the SuperSO8 footprint allows direct mounting to the PCB copper bus bar for heat extraction.
Recommended
Industrial 24 V to 48 V Motor Drive Half-Bridge
For 24 V and 48 V industrial motor drives such as robotics arms, AGVs, and servo position controllers, the BSC019N08NS5ATMA1 is used as the low-side switch in a 3-phase half-bridge driven by a gate driver IC like the 2ED21844S06JXUMA1. The 80 V rating gives 30 V to 60 V of margin above nominal 48 V, comfortably absorbing back-EMF spikes during PWM commutation. The low 1.9 mOhm RDS(on) keeps I^2R losses low at 20 A to 40 A peak motor current, while the exposed-pad SuperSO8 dissipates heat directly into the inner PCB copper.
Recommended
e-Mobility and Battery Protection Switch
In 48 V mild-hybrid e-mobility and lithium battery storage systems, the BSC019N08NS5ATMA1 serves as the main battery disconnect or pre-charge MOSFET. The 80 V VDS rating supports 48 V nominal packs with headroom for inductive transients during contactor switching, and the 1.9 mOhm RDS(on) minimizes voltage drop and heat during 100 A+ inrush. Multiple devices can be paralleled on a common heatsink for higher current; the SuperSO8 footprint keeps the total solution size small for underhood or pack-integrated battery management units.
Recommended
Solar Inverter Boost Stage Switch
For residential and commercial solar micro-inverters and DC optimizers operating from 40 V to 60 V input, the BSC019N08NS5ATMA1 functions as the boost switch or synchronous rectifier MOSFET. The 80 V drain-source breakdown tolerates open-circuit transients at 60 V Voc panels, while 1.9 mOhm RDS(on) achieves greater than 98 percent efficiency at 20 A continuous. Its OptiMOS 5 cell structure handles 100 kHz to 200 kHz switching frequencies typically used in solar boost stages without thermal runaway.
Recommended
Server and Datacenter 12 V Hot-Swap Switch
The BSC019N08NS5ATMA1 works as the main 12 V hot-swap pass MOSFET in server, storage, and networking line cards where 80 V breakdown is over-specified but provides ultra-low conduction loss at 30 A to 50 A load. Its 1.9 mOhm RDS(on) keeps the steady-state voltage drop under 100 mV at full load, allowing downstream regulators to operate closer to their minimum input voltage. The device's SuperSO8 footprint is compatible with industry-standard hot-swap controller layouts used in enterprise server designs.
Recommended
Recommended Products Summary
Engineering reference data for BSC019N08NS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC0901NSIATMA1 | BSC014NE2LSIATMA1 | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 | BSC0502NSIATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same |
| VDS max (V) | 80 | 80 | 25 | 30 | 30 | 60 |
| RDS(on) max at VGS=10V (mOhm) | 1.9 | 9.0 | 1.4 | 9.0 | 5.0 | 5.0 |
| Continuous ID at TC=25C (A) | 237 | 50 (approx) | 300 (approx) | 40 (approx) | 60 (approx) | 100 (approx) |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation TC=25C (W) | 214 | 96 (approx) | 139 (approx) | 69 (approx) | 89 (approx) | [DATA_NEEDED] |
| Price Tier (1k qty, USD) | 2.05 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-leading 1.9 mOhm RDS(on) in SuperSO8 5x6 for 80 V class (vs BSC0901NSIATMA1)
- Higher 80 V breakdown than 60 V or 30 V class SuperSO8 alternatives (vs BSC0502NSIATMA1)
- OptiMOS 5 trench technology with lower figure-of-merit than prior OptiMOS generations (vs BSC014NE2LSIATMA1)
Design Notes
Estimated: At 50 A continuous through the BSC019N08NS5ATMA1 at 25 C ambient with RDS(on) = 1.9 mOhm, conduction loss is approximately 4.75 W. With a SuperSO8 theta_JA of approximately 50 C/W on a 1 oz 6 cm^2 copper plane, junction temperature rises 237 C above ambient, which is unsustainable. A 4-layer board with an internal 2 oz copper plane directly under the exposed pad and an array of 0.3 mm thermal vias drops theta_JA to roughly 35 C/W, keeping the junction below 175 C with a 25 C ambient. At 30 A or below, the part runs comfortably on standard 2-layer FR4.
The exposed pad is the primary drain electrical and thermal path and must be soldered to a copper pour with at least 0.3 mm thermal vias in a 3x3 array on 1.0 mm pitch. Source pins 2, 3, 5, 6, 7, and 8 should be tied to a common ground copper pour on the top layer to minimize source inductance. Place the gate drive loop (gate resistor + driver output) directly over the gate pin to keep the gate-drive loop area under 0.5 cm^2; this reduces ringing and EMI at the switching node.
Do not operate the BSC019N08NS5ATMA1 with VGS below 10 V in the high-current path - at 4.5 V VGS the on-resistance is roughly 2x to 3x higher, multiplying conduction loss and risking thermal runaway. Always include a TVS clamp or snubber across drain-source when the load is inductive (motors, solenoids) to keep VDS transients below 80 V. Finally, avoid paralleling devices without individual gate resistors; otherwise gate-oscillation between mismatched devices can cause shoot-through and catastrophic failure.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - choose AEC-Q100-qualified parts from the Infineon automotive catalog for automotive designs.
