BSC021N08NS5ATMA1 vs BSC014N06NSATMA1 Comparison

Detailed side-by-side comparison of BSC021N08NS5ATMA1 by Infineon and BSC014N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 βœ“ Active
Infineon
BSC014N06NSATMA1 BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 βœ“ Active

Specification Comparison

Parameter BSC021N08NS5ATMA1 BSC014N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.81 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC021N08NS5ATMA1 β€”
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 (shielded-gate trench)
Drain-Source Voltage (V_DS max) 80 V β€”
Continuous Drain Current (I_D, Tc=25Β°C) 226 A β€”
Continuous Drain Current (I_D, Tc=100Β°C) 100 A β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance R_DS(on) max (V_GS=10 V) 2.1 mΞ© β€”
Gate-Source Voltage V_GS max Β±20 V β€”
Power Dissipation P_D (Tc=25Β°C) 214 W β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package SuperSO8 5x6 (PG-TSON-8-3) PG-TDSON-8-17 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Total Gate Charge Q_G typ [DATA_NEEDED: total gate charge] β€”
R_thJC thermal resistance max [DATA_NEEDED: R_thJC] β€”
RoHS Status Compliant (Pb-free) Compliant
MSL Level MSL 1 (per JEDEC J-STD-020) 1
Avalanche Energy Rated Yes (single-pulse) β€”
Delivery Form Tape & Reel (T&R) β€”
Product Family β€” OptiMOS 5
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 60 V
Gate-Source Voltage (VGS) Max β€” +/- 20 V
Continuous Drain Current (ID) at Ta β€” 30 A
Continuous Drain Current (ID) at Tc β€” 100 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) Typ @ VGS=10V β€” 1.4 mOhm
On-Resistance RDS(on) Max @ VGS=10V β€” 1.45 mOhm
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 156 W
Operating Temperature Range β€” -55C to +150C

Datasheets & Resources

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