BSC050NE2LSATMA1 vs IPB020N10N5ATMA1 Comparison
Detailed side-by-side comparison of BSC050NE2LSATMA1 by Infineon and IPB020N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC050NE2LSATMA1 | IPB020N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 58 A | — |
| Continuous Drain Current (I_D) at Ta=25C | 39 A | — |
| R_DS(on) max at V_GS=10V | 5 mOhm | — |
| R_DS(on) typical at V_GS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 28 W | — |
| Technology | OptiMOS 25V (trench) | OptiMOS 5 |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TO263-3 (D2PAK-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55C to +175C |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPB020N10N5ATMA1 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Maximum Drain Current (ID max, per Infineon product page) | — | 176 A |
| On-Resistance RDS(on) max | — | 2 mΩ |
| Power Dissipation (PD) at Tc | — | 375 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Channel Type | — | N-Channel |
| Packaging | — | Tape & Reel (ATMA1 suffix) |