IPB020N10N5ATMA1 - 100V 2mΩ N-Channel OptiMOS 5 | Infineon
MPN: IPB020N10N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.99 | $5.99 |
| 10 | $5.39 | $53.90 |
| 100 | $4.52 | $452.00 |
| 500 | $3.85 | $1,925.00 |
| 1,000 | $3.3 | $3,300.00 |
Drop-in alternatives for IPB020N10N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB020N10N5LFATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$2.62 / Unit
View Datasheet →BSC050NE2LSATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSC014N04LSIATMA1
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →IPB020N10N5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPB020N10N5ATMA1 |
| Technology | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 120 A |
| Maximum Drain Current (ID max, per Infineon product page) | 176 A |
| On-Resistance RDS(on) max | 2 mΩ |
| Power Dissipation (PD) at Tc | 375 W |
| Package | PG-TO263-3 (D2PAK-3) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +175C |
| Channel Type | N-Channel |
| Packaging | Tape & Reel (ATMA1 suffix) |
| RoHS Status | Compliant |
IPB020N10N5ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (VGS threshold ~3-4 V, full enhancement at 10 V) |
| Pin 2 | Drain — Drain terminal (electrically connected to the exposed tab/heat sink pad) |
| Pin 3 | Source — Source terminal (return path for gate drive and load current) |
| Pin Tab | Drain — Exposed metal tab - internally connected to pin 2 (Drain); must be soldered to PCB copper for heat dissipation |
Safe Operating Area (DC, Tj = 25C unless noted)
Typical Applications
IPB020N10N5ATMA1 is suitable for 7 applications: 48V Telecom Synchronous Rectifier, Server and Datacenter DC-DC Converters, Industrial Motor Drive H-Bridge, Battery Management and Protection (12V/24V/48V), Solar Charge Controller MPPT Stage, eMobility E-Bike and Light Vehicle Power, Uninterruptible Power Supply (UPS) Inverter.
48V Telecom Synchronous Rectifier
The IPB020N10N5ATMA1 is well matched for secondary-side synchronous rectification in isolated 48 V telecom brick supplies and PoE applications. Its 100 V VDS rating provides 50 V margin above the 48 V nominal bus plus transient excursions, while the 2 mΩ RDS(on) minimizes conduction losses in high-current rectifiers carrying 50-80 A. The OptiMOS 5 technology delivers low Qg (~150 nC typical) and low Qrr, enabling high-frequency operation above 100 kHz typical of modern full-bridge and active-clamp forward topologies. Compared to a Schottky diode solution, the synchronous rectifier reduces rectification losses by 50-70 percent, significantly improving overall power supply efficiency above 92 percent.
Recommended
Server and Datacenter DC-DC Converters
High-current 48 V to 12 V or 48 V to point-of-load DC-DC converters in server and datacenter power architectures benefit from the IPB020N10N5ATMA1's ultra-low RDS(on) of 2 mΩ. At continuous currents of 80-120 A, conduction losses are dominated by I^2 × RDS(on), and every milliohm matters for overall efficiency and thermal budget. The D2PAK-3 package supports substantial PCB copper for heat spreading, and the OptiMOS 5 figure-of-merit (RDS(on) × Qg) enables 200 kHz+ switching frequencies in multi-phase buck topologies used in GPU and CPU VR power delivery. Compared to older OptiMOS 3 generations, this part delivers approximately 30 percent lower switching losses.
Recommended
Industrial Motor Drive H-Bridge
The IPB020N10N5ATMA1 serves as a high-side or low-side switch in industrial motor drive H-bridges and three-phase inverters for 24 V and 48 V brushless DC motors. Its 120 A continuous drain current supports motor power ratings up to several kW, while the 100 V VDS provides comfortable margin above 48 V bus transients from inductive switching. The 2 mΩ RDS(on) reduces thermal dissipation in the switching stage, allowing higher PWM duty cycles without exceeding the 175 C junction temperature limit. The D2PAK-3 package is compatible with industry-standard TO-263 footprints from other vendors, enabling second-source flexibility in volume production.
Recommended
Battery Management and Protection (12V/24V/48V)
Battery management systems for 12 V, 24 V, and 48 V lithium-ion or lead-acid battery packs use the IPB020N10N5ATMA1 as the main disconnect switch and load switch. Its 100 V VDS handles battery transients and inductive load kickback, while the 2 mΩ RDS(on) keeps voltage drop below 240 mV at 120 A, minimizing wasted power during high-current discharge cycles. The N-channel configuration allows low-side switching for simple gate-drive circuits, and the wide operating temperature range (-55C to +175C) supports automotive and industrial battery environments. Compared to mechanical contactors, this MOSFET-based protection is faster and contactless, improving system reliability.
Recommended
Solar Charge Controller MPPT Stage
Maximum Power Point Tracking (MPPT) charge controllers in solar power systems benefit from the IPB020N10N5ATMA1 as the main switching element in buck, boost, or buck-boost converter topologies. Its 100 V VDS accommodates solar panel open-circuit voltages up to 80 V (typical 24 V nominal panel strings), while the 2 mΩ RDS(on) maximizes converter efficiency above 98 percent at high load currents. The OptiMOS 5 low gate charge reduces driver losses at 50-100 kHz switching frequencies common in MPPT designs. The D2PAK-3 exposed tab enables efficient heat dissipation in outdoor enclosures with limited airflow.
Recommended
eMobility E-Bike and Light Vehicle Power
Electric bicycles, e-scooters, and light electric vehicles use the IPB020N10N5ATMA1 in their 36 V and 48 V traction motor controllers and DC-DC converters. Its 2 mΩ RDS(on) minimizes voltage drop and heat generation across the switching stage, while the 120 A continuous current capability supports motor power ratings up to 3-5 kW peak. The wide -55C to +175C operating range covers outdoor vehicle environments from winter cold to summer heat. The D2PAK-3 SMT package supports automated assembly for volume production, reducing manufacturing cost versus through-hole alternatives like TO-220 in this power class.
Recommended
Uninterruptible Power Supply (UPS) Inverter
Online UPS systems and inverter topologies use the IPB020N10N5ATMA1 in the low-frequency inverter stage that converts battery DC to 110/220 VAC. Its 100 V VDS supports 48 V battery bus configurations, while the 2 mΩ RDS(on) reduces conduction losses during continuous inverter operation at full load. The device's avalanche rating and robust body diode handle the inductive switching transients inherent in inverter bridge legs. Compared to IGBTs at this power level, the MOSFET offers faster switching and lower switching losses, enabling higher inverter efficiency and smaller heatsinks in tower-style UPS products.
Recommended
Recommended Products Summary
Engineering reference data for IPB020N10N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB020N10N5LFATMA1 | BSC050NE2LS | BSC014N04LSI |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 25 V (-75%) | 40 V (-60%) |
| Continuous Drain Current (ID at Tc) | 120 A | 120 A | [DATA_NEEDED] | [DATA_NEEDED] |
| On-Resistance RDS(on) max at VGS=10V | 2 mΩ | 2 mΩ | 5 mΩ | 1.4 mΩ |
| Power Dissipation (PD at Tc) | 375 W | 375 W | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS |
| Operating Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
| RoHS Compliance | Yes | Yes | Yes | Yes |
Key Differentiators
- Industry-leading RDS(on) of 2 mΩ in 100V D2PAK class (vs BSC050NE2LS)
- OptiMOS 5 process technology for lowest FOM (vs BSC014N04LSI)
- Identical die in lead-free variant (vs IPB020N10N5LFATMA1)
Design Notes
Estimated: At continuous ID = 120 A and RDS(on) = 2 mΩ, conduction losses are I^2 x R = 120^2 x 0.002 = 28.8 W. The D2PAK-3 package has a typical junction-to-ambient thermal resistance (theta_JA) of ~40 C/W on a 1 oz copper 1 sq inch pad. With 28.8 W dissipation, junction temperature rise above ambient is roughly 40 x 28.8 = 1152 C, which exceeds Tj max of 175 C. Designers MUST use a much larger copper pad (>= 6 sq inches) with thermal vias to a bottom-side heat spreader to maintain Tj below 150 C. At a more realistic continuous current of 60 A, dissipation drops to 7.2 W, manageable with standard 1-2 sq inch pad designs.
The exposed tab (Drain) must be soldered directly to a copper pad on the PCB - this serves as both the primary electrical connection to pin 2 and the main thermal path. Use thermal vias (typically 0.3 mm diameter, 1-2 mm pitch, filled or plugged with copper) under the tab to conduct heat to inner layers or the bottom-side heatsink. Keep the gate-drive trace short and direct - high dV/dt on the drain can capacitively couple back to the gate through Cgd, causing unwanted turn-on. Place a 10-100 kohm gate-to-source resistor close to the gate pin to prevent floating-gate turn-on during transients.
Do not exceed the VGS maximum rating of +/-20 V - use a gate-drive zener clamp or dedicated gate-driver IC if the gate can ring above 20 V from parasitic inductance. Do not operate the device in linear mode (partial enhancement) at high current for extended periods - the device is optimized for fully-enhanced switching operation. Ensure the gate driver can source/sink at least 1 A peak current to charge/discharge the input capacitance (Ciss ~10 nF typical) quickly. Last, avoid long lead lengths on the gate - even 5 mm of PCB trace inductance can resonate with Ciss and cause gate oscillations above 50 MHz.
For synchronous rectification in 48 V telecom applications, pair the IPB020N10N5ATMA1 with a complementary gate driver such as the 1EDI60N12AFXUMA1 isolated gate driver. The driver provides 10-12 V gate drive with adequate source/sink current (>2 A peak) for fast switching transitions of 20-50 ns. Place a local 10 uF ceramic bypass capacitor close to the device's drain-source terminals to handle high di/dt during switching transitions and minimize voltage overshoot from parasitic inductance.
Compliance Information
RoHS and lead-free compliant per Infineon product page and DigiKey listing. Not AEC-Q100 qualified - this is an industrial/consumer-grade part; for automotive applications, refer to Infineon's automotive-grade OptiMOS portfolio.
