BSC190N15NS3GATMA1 vs BSC520N15NS3G Comparison

Detailed side-by-side comparison of BSC190N15NS3GATMA1 by Infineon and BSC520N15NS3G by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC190N15NS3GATMA1 BSC520N15NS3G
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.98 $0.62
Technology OptiMOS 3 (N-Channel) OptiMOS 3 (trench-gate N-channel)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Tc=25C 50 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max 20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V 19 mOhm —
On-Resistance RDS(on) typ at VGS=10V [DATA_NEEDED: RDS(on) typical at 10V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at Tc=25C 125 W —
Operating Temperature Range -55 C to +150 C —
Package PG-TDSON-8-1 (TDSON-8 EP) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant —
MSL Level 1 —
Manufacturer — Infineon Technologies
Part Number — BSC520N15NS3 G
Drain-Source Voltage (VDS) max — 150 V
Continuous Drain Current (ID) max at TC=25C — 21 A
On-Resistance RDS(on) max — 52 mΩ at VGS=10 V
Power Dissipation (Ptot) at TC=25C — 57 W
Operating Junction Temperature — -55C to +150C
Pin Count — 8
Lead Plating — Pb-free
RoHS Compliance — Compliant
JEDEC Qualification — Qualified per JEDEC
Channel Type — N-Channel (normal level)
Typical Application — DC-DC conversion, synchronous rectification

Datasheets & Resources

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