BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
MPN: BSC190N15NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.1 | $2.10 |
| 10 | $1.89 | $18.90 |
| 100 | $1.58 | $158.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.15 | $1,150.00 |
| 3,000 | $0.98 | $2,940.00 |
Drop-in alternatives for BSC190N15NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →BSC190N15NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A |
| Gate-Source Voltage (VGS) max | 20 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm |
| Power Dissipation (PD) at Tc=25C | 125 W |
| Operating Temperature Range | -55 C to +150 C |
| Package | PG-TDSON-8-1 (TDSON-8 EP) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
BSC190N15NS3GATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (connected to exposed pad) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin PAD | Drain — Drain terminal via exposed thermal pad |
Safe Operating Area (DC)
Typical Applications
BSC190N15NS3GATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Industrial Motor Drive Half-Bridge, Solar Micro-Inverter Boost Stage, Server 48V Hot-Swap / OR-ing Controller, Electric Vehicle 24V Auxiliary Battery Switch, Telecom Brick DC-DC Primary Switch.
48V Telecom Synchronous Rectification
The BSC190N15NS3GATMA1 is ideal for 48V telecom bus synchronous rectification stages where efficiency and thermal density are critical. Its 150V VDS rating provides 3x margin above 48V nominal plus typical 100V transients, while the 19 mOhm RDS(on) at VGS=10V keeps conduction loss below 1% at 30A load. The PG-TDSON-8-1 package with low thermal resistance enables compact OR-ing and hot-swap designs. Designers place this MOSFET as the low-side sync-FET on the secondary side of an isolated bus converter, paired with a digital controller. Compared to 100V-rated parts it offers safer transient margin without sacrificing switching speed.
Recommended
Industrial Motor Drive Half-Bridge
The BSC190N15NS3GATMA1 serves as the high-side or low-side switch in 48V-96V industrial motor drive half-bridges for robotics, AGVs, and servo amplifiers. Its 50A continuous current supports 3-5 kW motor power levels, and the 150V VDS rating tolerates back-EMF spikes from inductive loads. The exposed drain pad provides direct PCB cooling without a heatsink at continuous currents under 15A. A typical configuration places two BSC190N15NS3GATMA1 parts in a totem-pole half-bridge driven by an IR2117STRPBF or similar gate driver, with the low-side sourced from the bus return. The part's low Qg enables 50-100 kHz PWM operation with manageable switching losses.
Recommended
Solar Micro-Inverter Boost Stage
The BSC190N15NS3GATMA1 works as the main boost switch in micro-inverter and solar charge controller power stages handling 60-100V photovoltaic inputs. Its 150V VDS rating easily covers Voc of 60-cell panels plus cold-temperature overshoot, and the 19 mOhm RDS(on) at 10V gate drive keeps conduction loss low at 20-30A typical operating currents. The OptiMOS 3 process technology gives fast switching edges compatible with 50-100 kHz switching frequency in modern LLC and interleaved boost topologies. Mounting the PG-TDSON-8-1 onto 2 oz copper with thermal vias allows continuous operation without forced-air cooling up to 80C ambient.
Recommended
Server 48V Hot-Swap / OR-ing Controller
The BSC190N15NS3GATMA1 enables hot-swap insertion and load OR-ing in 48V server backplanes where the part acts as a low-loss disconnect switch. Its 150V VDS rating tolerates ringing from hot-plug events, and the 19 mOhm RDS(on) adds less than 100 mV drop at 50A - significantly better than mechanical relays or Schottky OR-ing diodes. Designers wire this MOSFET in-line with the 48V rail, gate driven by an OR-ing controller IC like the IRF9383MTRPBF. The PG-TDSON-8-1 footprint saves board area versus TO-220 alternatives while the exposed pad provides adequate cooling at steady-state OR-ing currents under 20A.
Recommended
Electric Vehicle 24V Auxiliary Battery Switch
The BSC190N15NS3GATMA1 functions as a low-side disconnect switch for 12V/24V auxiliary battery management in 48V mild-hybrid and industrial EV applications. Its 150V VDS rating provides exceptional margin above the 24V nominal bus, and the 50A continuous current handles high inrush currents from capacitive loads and 12V starters. The PG-TDSON-8-1 surface-mount package suits PCB-based battery management units where mechanical contactors would be too bulky. Designers place this MOSFET between the battery negative terminal and chassis ground, controlled by a BMS gate driver. Avalanche-rated single-pulse body diode handles reverse-battery protection events.
Recommended
Telecom Brick DC-DC Primary Switch
The BSC190N15NS3GATMA1 operates as the primary-side switch in 36-75V input telecom brick DC-DC converters up to 500W. Its 150V VDS rating covers the rectified 75V bus with comfortable margin, and the 19 mOhm RDS(on) minimizes conduction loss at 36V input full load. The 50A continuous current handles peak transformer primary currents in 300-500W full-bridge and half-bridge topologies. Designers use this MOSFET in a hard-switched PFC or LLC primary stage driven by a controller like the ICE2QR2280GXUMA1. The PG-TDSON-8-1 package fits well in 1/4-brick and 1/8-brick form factors where power density is critical.
Recommended
Recommended Products Summary
Engineering reference data for BSC190N15NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC190N15NS3G | BSC360N15NS3GATMA1 | BSC098N10NS5ATMA1 | BSC070N10NS5ATMA1 | IRFS52N15DTRLP | IPP120N08S403AKSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-1 | PG-TDSON-8-1 | D2PAK | TO-220-3 |
| VDS max (V) | 150 | 150 | 150 | 100 | 100 | 150 | 80 |
| Continuous ID at Tc=25C (A) | 50 | 50 | 36 | 98 | 70 | 52 | 120 |
| RDS(on) max at VGS=10V (mOhm) | 19 | 19 | 36 | 9.8 | 7.0 | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (W) | 125 | 125 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | HEXFET | OptiMOS 3 |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- 40% lower RDS(on) and 45% better FOM vs next-best competitor (vs IPP120N08S403AKSA1)
- Higher VDS rating (150V) vs OptiMOS 5 100V family (vs BSC098N10NS5ATMA1)
- Surface-mount PG-TDSON-8-1 vs D2PAK through-hole (vs IRFS52N15DTRLP)
Design Notes
Estimated: At continuous ID=30A with RDS(on)=19 mOhm at 25C junction (rising to ~28 mOhm at 150C), conduction loss is approximately P=I^2*R = 30^2*0.019 = 17.1W (25C) or 25.2W (150C). With PG-TDSON-8-1 thermal resistance of ~0.9 C/W junction-to-case, junction rise above case is P*Rth_jc = 25.2*0.9 = 22.7C at 150C. Copper area on PCB must keep case below 100C for reliable 30A continuous operation; mount to a minimum 25x25mm 2oz copper pour.
Minimize the high-current loop area between the MOSFET drain (exposed pad), the transformer/inductor, and the input bypass capacitors. Use a Kelvin-source connection where the gate-drive return path is separate from the main source current path. Place the gate resistor (typically 4.7-22 ohm) as close to pin 4 as possible to suppress parasitic oscillation. The exposed drain pad must be soldered to the PCB land pattern for both electrical connection and thermal dissipation.
Do not exceed VGS=20V maximum - even brief over-voltage spikes on the gate can damage the thin gate oxide. Add a 10k-100k resistor from gate to source to ensure the MOSFET stays off during controller power-up. Use a gate-drive voltage of 10V (not 12V or 15V) to stay safely below the 20V VGS max. Verify the body diode recovery behavior in bridge topologies; OptiMOS 3 has good but not unlimited reverse-recovery performance. Always reference the manufacturer's application notes for the specific topology.
Use thermal vias under the exposed drain pad to spread heat into inner PCB copper layers. Recommended pattern: array of 4x4 to 6x6 vias at 0.3mm drill, 0.6mm pitch, filled or capped to prevent solder wicking. Keep high-voltage drain traces (up to 150V) away from low-voltage gate trace to avoid coupling. Maintain at least 0.5mm clearance between drain copper and signal traces per IPC-2221 standards for 150V applications.
Compliance Information
RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon's OptiMOS 3 family datasheet. Not AEC-Q100 qualified - select automotive-grade OptiMOS parts (e.g., IPB025N10N3G) for automotive applications. Conflict-minerals statement available on Infineon corporate responsibility page.
