BSC340N08NS3GATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of BSC340N08NS3GATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC340N08NS3GATMA1
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
BSC340N08NS3GATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | BSC340N08NS3GATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC340N08NS3GATMA1 | β |
| Technology | OptiMOS 3 (N-Channel Trench) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID, Tc) | 23 A | β |
| Continuous Drain Current (ID, Ta) | 7 A | β |
| Pulsed Drain Current (IDM) | 92 A | β |
| On-State Resistance RDS(on) max @ VGS=10V | 34 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage VGS max | +/- 20 V | β |
| Power Dissipation (Tc) | 32 W | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Operating Temperature Range | -55C to +150C | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | MSL 1 (per JEDEC J-STD-020) |
| RoHS / Lead-Free | RoHS compliant, lead-free | β |
| Channel Type | Single N-Channel | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typical] | β |
| Avalanche Rating | Repetitive avalanche rated | β |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| RoHS Compliance | β | Compliant (per Infineon product page) |