BSS84-7-F-W vs BSS84PH6327XTSA2 Comparison

Detailed side-by-side comparison of BSS84-7-F-W by Diodes Incorporated and BSS84PH6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Diodes Incorporated
BSS84-7-F-W BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W - P-Ch 50V 130mA SOT-23 MOSFET | Diodes Inc

BSS84-7-F-W ✓ Active

Specification Comparison

Parameter BSS84-7-F-W BSS84PH6327XTSA2
Brand Diodes Incorporated Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.10
Transistor Polarity P-Channel —
Channel Type Enhancement Mode —
Drain-Source Voltage (Vdss) 50 V —
Continuous Drain Current (Id) 130 mA (Ta) —
Power Dissipation (Pd) 300 mW (Ta) —
On-State Resistance RDS(on) 10 Ohm (max, per Future Electronics listing) —
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs th) [DATA_NEEDED: Vgs threshold] —
Number of Channels 1 —
Package SOT-23-3 PG-SOT23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Terminal Finish Matte Tin plated, solderable per MIL-STD-202 —
Operating Temperature [DATA_NEEDED: operating temperature range] -55C to +150C
Packaging Tape & Reel (3K per reel, -W suffix) —
RoHS Status Compliant Compliant
Technology Si (silicon DMOS) —
Manufacturer — Infineon Technologies
Part Number — BSS84PH6327XTSA2
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) — -170 mA (Ta)
Power Dissipation (PD) — 360 mW (Ta)
On-State Resistance (RDS(on)) max — 8 ohm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-to-Source Voltage (VGS) — +/-20 V
Qualification — AEC-Q101 (Automotive)
Technology Family — SIPMOS OptiMOS
Polarity — P-Channel Enhancement Mode
Lead-Free — Yes

Datasheets & Resources

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