BSS84-7-F-W vs BSS84PH6327XTSA2 비교
다음의 상세 나란히 비교: BSS84-7-F-W 제조: Diodes Incorporated 및 BSS84PH6327XTSA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BSS84-7-F-W | BSS84PH6327XTSA2 |
|---|---|---|
| 브랜드 | Diodes Incorporated | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.03 | $0.10 |
| Transistor Polarity | P-Channel | — |
| Channel Type | Enhancement Mode | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Continuous Drain Current (Id) | 130 mA (Ta) | — |
| Power Dissipation (Pd) | 300 mW (Ta) | — |
| On-State Resistance RDS(on) | 10 Ohm (max, per Future Electronics listing) | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vgs th) | [DATA_NEEDED: Vgs threshold] | — |
| Number of Channels | 1 | — |
| 패키지 | SOT-23-3 | PG-SOT23 (SOT-23-3) |
| 실장 유형 | Surface Mount | Surface Mount |
| Terminal Finish | Matte Tin plated, solderable per MIL-STD-202 | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | -55C to +150C |
| Packaging | Tape & Reel (3K per reel, -W suffix) | — |
| RoHS 상태 | Compliant | Compliant |
| Technology | Si (silicon DMOS) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS84PH6327XTSA2 |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| On-State Resistance (RDS(on)) max | — | 8 ohm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-to-Source Voltage (VGS) | — | +/-20 V |
| Qualification | — | AEC-Q101 (Automotive) |
| Technology Family | — | SIPMOS OptiMOS |
| Polarity | — | P-Channel Enhancement Mode |
| Lead-Free | — | Yes |