BSZ065N06LS5ATMA1 vs BSZ070N08LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ065N06LS5ATMA1 by Infineon and BSZ070N08LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ065N06LS5ATMA1
BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon
BSZ065N06LS5ATMA1 ✓ ActiveInfineon
BSZ070N08LS5ATMA1
BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon
BSZ070N08LS5ATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSZ065N06LS5ATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | — |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 logic-level | — |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) Max | 65 A | — |
| Drain Current @ Tc (ID, Tc=25°C) | 40 A | — |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ | — |
| Power Dissipation (PD) Max | 46 W | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=4.5 V | — |
| Input Capacitance (Ciss) | 1.8 nF | — |
| Operating Temperature Range | -55°C to +150°C | — |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Part Family | — | OptiMOS™ 5 (80 V logic-level) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TC | — | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | — | [DATA_NEEDED: TA-rated ID] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 7 mΩ |
| On-Resistance RDS(on) @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate Threshold Voltage VGS(th) | — | Logic-level (drive compatible with 4.5 V) |
| Total Gate Charge Qg | — | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | — | 69 W |
| Operating Junction Temperature | — | -55 °C to +150 °C |
| MSL Level | — | 1 (per JEDEC J-STD-020, unleaded reflow) |
| Avalanche Rated | — | Yes |
| Reel Quantity | — | 5000 per 13-inch reel (T&R) |