BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon
MPN: BSZ065N06LS5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.94 | $94.00 |
| 500 | $0.76 | $380.00 |
| 1,000 | $0.62 | $620.00 |
Drop-in alternatives for BSZ065N06LS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC066N06NSATMA1
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View Datasheet →BSZ070N08LS5ATMA1
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View Datasheet →BSC0902NSATMA1
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$0.78 / Unit
View Datasheet →BSC052N08NS5ATMA1
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$0.52 / Unit
View Datasheet →BSZ096N10LS5ATMA1
✅ Drop-In✓ In Stock
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View Datasheet →BSZ011NE2LS5IATMA1
✅ Drop-In✓ In Stock
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View Datasheet →BSZ065N06LS5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS™ 5 logic-level |
| Drain-Source Voltage (VDS) Max | 60 V |
| Continuous Drain Current (ID) Max | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ |
| Power Dissipation (PD) Max | 46 W |
| Gate Threshold Voltage (VGS(th)) | 2.3 V |
| Total Gate Charge (Qg) | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | 1.8 nF |
| Operating Temperature Range | -55°C to +150°C |
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
BSZ065N06LS5ATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source (thermal pad connection) |
| Pin 5 | D — Drain (thermal pad) |
| Pin 6 | D — Drain (thermal pad) |
| Pin 7 | D — Drain (thermal pad) |
| Pin 8 | G — Gate |
Safe Operating Area (DC, TJ=25°C)
Typical Applications
BSZ065N06LS5ATMA1 is suitable for 7 applications: Synchronous Rectification in 24V Buck Converters, Wireless Charging Power Stage, 12V/24V Battery Management & Hot-Swap, Telecom Point-of-Load Converters, Brushless DC Motor Drive (Low-Side FET), Adapter and Power Bank Output Switch, DC Load Switch in Industrial Automation.
Synchronous Rectification in 24V Buck Converters
The BSZ065N06LS5ATMA1 fits synchronous rectification in 24V buck converters because its 60 V VDS rating provides a 36 V safety margin above 24 V input, comfortably handling transients on industrial buses. With 6.5 mΩ RDS(on) at VGS=10 V and only 13 nC total gate charge, conduction and switching losses are minimized, boosting efficiency above 95% in adapter and telecom POL designs. The PQFN 3.3x3.3 footprint enables high-density layouts where space is at a premium.
Recommended
Wireless Charging Power Stage
For wireless-charging transmitter and receiver power stages, the BSZ065N06LS5ATMA1's logic-level gate threshold (2.3 V) allows direct MCU or wireless-charging-IC drive without charge pumps, simplifying the resonant tank. Its low FOM (RDS(on) × Qg) keeps switching losses low at the 100-200 kHz operating frequencies typical of Qi chargers. The small PQFN package concentrates heat under the coil area where board area is constrained.
Recommended
12V/24V Battery Management & Hot-Swap
In 12V/24V battery management and hot-swap controllers, the BSZ065N06LS5ATMA1 acts as the load disconnect switch. Its 65 A continuous drain current supports high inrush loads, while the 60 V VDS provides headroom for inductive transients and load-dump events. The 6.5 mΩ RDS(on) keeps steady-state conduction losses low, preserving battery runtime in portable and e-mobility applications.
Recommended
Telecom Point-of-Load Converters
The BSZ065N06LS5ATMA1 is engineered by Infineon specifically for telecom POL converters operating from 24 V or 48 V backplanes, where its 60 V VDS rating covers the worst-case rectified telecom bus. Low gate charge (13 nC) supports multi-MHz switching in the synchronous FET position, shrinking inductor and capacitor size on the POL module PCB. The OptiMOS 5 process delivers best-in-class figure-of-merit for adapter and telecom power density.
Recommended
Brushless DC Motor Drive (Low-Side FET)
In BLDC motor drives for fans, pumps, and small appliances, the BSZ065N06LS5ATMA1 serves as the low-side switching FET in a three-phase inverter. Its 6.5 mΩ RDS(on) and 46 W power dissipation support continuous motor currents up to several amps with adequate PCB copper. The logic-level gate threshold allows direct PWM drive from a 3.3 V or 5 V MCU through a small gate-driver stage.
Recommended
Adapter and Power Bank Output Switch
For USB-PD adapters and power-bank output switches, the BSZ065N06LS5ATMA1 provides a low-loss eFuse or load-disconnect element. Its 65 A current rating covers 100 W USB-PD outputs with margin, while the 60 V VDS handles the full adapter output range. The PQFN 3.3x3.3 package fits inside the tightest adapter housings alongside magnetics and USB-C connectors.
Recommended
DC Load Switch in Industrial Automation
In industrial automation PLCs and distributed I/O, the BSZ065N06LS5ATMA1 functions as a low-side DC load switch energizing relays, solenoids, and small actuators. Its logic-level gate drive interfaces directly with industrial 24 V logic outputs, while 60 V VDS suppresses inductive kickback from relay coils without external TVS protection. The -55 to +150 °C junction range covers harsh factory-floor environments.
Recommended
Recommended Products Summary
Engineering reference data for BSZ065N06LS5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC066N06NSATMA1 | BSZ070N08LS5ATMA1 | BSC0902NSATMA1 | BSC052N08NS5ATMA1 | BSZ096N10LS5ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same | PG-TSDSON-8-FL (PQFN 3.3x3.3) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 100 V | 80 V | 100 V |
| Continuous Drain Current (ID) | 65 A | 60 A | 70 A | 62 A | 55 A | 57 A |
| On-Resistance RDS(on) Max @ VGS=10V | 6.5 mΩ | 6.6 mΩ | 7.0 mΩ | 9.0 mΩ | 5.2 mΩ | 9.6 mΩ |
| Total Gate Charge (Qg) | 13 nC | 15 nC | 14 nC | 18 nC | 11 nC | 20 nC |
| Power Dissipation (PD) | 46 W | 44 W | 46 W | 42 W | 46 W | 40 W |
| Technology / Family | OptiMOS 5 logic-level | OptiMOS 5 standard | OptiMOS 5 logic-level | OptiMOS 5 standard | OptiMOS 5 standard | OptiMOS 5 logic-level |
| Unit Price @ 1000 pcs (USD) | $0.62 | $0.68 | $0.78 | $0.55 | $0.72 | $0.71 |
Key Differentiators
- Logic-level gate threshold for direct MCU drive (vs BSC066N06NSATMA1)
- Lower RDS(on) than higher-voltage OptiMOS 5 siblings (vs BSZ070N08LS5ATMA1 (80 V version))
- Higher current rating than 100 V OptiMOS 5 parts (vs BSC0902NSATMA1 (100 V, 9 mΩ))
Design Notes
Estimated: at ID=20 A and RDS(on)=6.5 mΩ, the BSZ065N06LS5ATMA1 dissipates approximately P = I² × RDS(on) = 20² × 0.0065 = 2.6 W. On a 1 oz copper 1 sq. inch pad with thermal via array, θJA is approximately 50 °C/W, giving a junction rise of 130 °C above ambient. For continuous operation above 15 A, either forced-air cooling or a larger PCB copper area is required. The exposed thermal pad must be soldered to maximize heat transfer.
Place the BSZ065N06LS5ATMA1 with its thermal pad directly over a thermal via array connecting to an inner or bottom copper plane. Use at least 9 thermal vias (0.3 mm drill, 0.5 mm pitch) under the pad to drop thermal resistance to the bottom-side heatsink copper. Keep gate-loop traces short and direct; place the gate-drive resistor within 5 mm of pin 8 to minimize ringing in high-current switching transitions.
Do not operate the BSZ065N06LS5ATMA1 above 60 V VDS even transiently, as avalanche breakdown can permanently degrade the device. For 48 V telecom applications where the bus may transiently exceed 60 V, choose the BSZ070N08LS5ATMA1 (80 V VDS) instead. Also, ensure the gate drive reaches the full 10 V plateau; partial enhancement at 4.5 V raises RDS(on) and can cause thermal runaway in high-current switching stages.
The PQFN 3.3x3.3 package has low parasitic source inductance but the gate loop must still be minimized to control switching-node ringing. Add a small ferrite bead or 1-10 Ω gate resistor in series with the gate drive to dampen high-frequency ringing. Place a snubber (RC or RCD) across the FET if the synchronous-rectifier body-diode reverse recovery causes excessive dV/dt.
Compliance Information
RoHS and REACH compliance confirmed via Infineon product page and JLCPCB part listing. Standard part is not AEC-Q100 qualified; for automotive-grade equivalents in the same OptiMOS 5 family, consider BSZ011NE2LS5IATMA1 (25 V logic-level automotive).
