BTM9011EPXUMA1 vs BTH62004ESAXUMA1 Comparison

Detailed side-by-side comparison of BTM9011EPXUMA1 by Infineon and BTH62004ESAXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BTM9011EPXUMA1 BTH62004ESAXUMA1
Brand Infineon Infineon
Category Motor Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Topology Full-bridge (H-bridge) with integrated power MOSFETs 4 x High-Side (1:1)
Output Current Limit 10 A (typ) —
Path Resistance (per HS+LS) 175 mΩ typical at 25 °C —
Pulse Current (tpulse ≤ 1 s at 85 °C) 5.2 A —
Pulse Current (tpulse ≤ 10 s at 85 °C) 4.2 A —
Supply Voltage Range (normal) 7 V to 18 V —
Supply Voltage Range (extended) 4.5 V to 40 V —
PWM Frequency up to 20 kHz —
Interface SPI (status, configuration, diagnostics) —
Current Limitation Min, integrated —
Technology BCD (Bipolar-CMOS-DMOS) monolithic —
Package PG-TSDSO-14 with exposed pad PG-TSDSO-24-21 (exposed pad)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q100 AEC-Q100 qualified
Operating Temperature (junction) -40 °C to +150 °C —
Product Type — Smart High-Side Power Switch
Family — PROFET+ 48V
Number of Channels — 4
On-State Resistance (RDS(on)) — 200 mΩ typical per channel
Nominal Load Current per Channel — 1 A
Supply Voltage Range — Up to 54 V
Load-Dump Tolerance — 60 V (transient, per datasheet)
Power Transistor Technology — N-channel vertical power MOSFET with charge pump
Current Sense Diagnosis — Yes (analog IS pin)
Protection Features — Over-temperature, over-voltage, short-circuit, reverse battery
Operating Temperature Range — -40 °C to +150 °C junction

Datasheets & Resources

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