BTM9011EPXUMA1 vs BTH62004ESAXUMA1 Vergleich

Detaillierter Direktvergleich von BTM9011EPXUMA1 von Infineon und BTH62004ESAXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTM9011EPXUMA1 BTH62004ESAXUMA1
Marke Infineon Infineon
Kategorie Motor Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,62 $2,18
Topologie Full-bridge (H-bridge) with integrated power MOSFETs 4 x High-Side (1:1)
Output Current Limit 10 A (typ) —
Path Resistance (per HS+LS) 175 mΩ typical at 25 °C —
Pulse Current (tpulse ≤ 1 s at 85 °C) 5.2 A —
Pulse Current (tpulse ≤ 10 s at 85 °C) 4.2 A —
Supply Voltage Range (normal) 7 V to 18 V —
Supply Voltage Range (extended) 4.5 V to 40 V —
PWM Frequency up to 20 kHz —
Schnittstelle SPI (status, configuration, diagnostics) —
Current Limitation Min, integrated —
Technology BCD (Bipolar-CMOS-DMOS) monolithic —
Gehäuse PG-TSDSO-14 with exposed pad PG-TSDSO-24-21 (exposed pad)
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q100 AEC-Q100 qualified
Operating Temperature (junction) -40 °C to +150 °C —
Product Type — Smart High-Side Power Switch
Family — PROFET+ 48V
Number of Channels — 4
On-State Resistance (RDS(on)) — 200 mΩ typical per channel
Nominal Load Current per Channel — 1 A
Supply Voltage Range — Up to 54 V
Load-Dump Tolerance — 60 V (transient, per datasheet)
Power Transistor Technology — N-channel vertical power MOSFET with charge pump
Current Sense Diagnosis — Yes (analog IS pin)
Protection Features — Over-temperature, over-voltage, short-circuit, reverse battery
Betriebstemperaturbereich — -40 °C to +150 °C junction

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