BTS3011TEATMA1 vs ITS4200SMEPHUMA1 Comparison
Detailed side-by-side comparison of BTS3011TEATMA1 by Infineon and ITS4200SMEPHUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BTS3011TEATMA1 | ITS4200SMEPHUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Product Type | Smart Low-Side Power Switch | Smart High-Side Power Switch |
| Number of Channels | 1 | 1 |
| On-Resistance R_DS(on) (typ.) | 11 mΩ | — |
| Continuous Load Current | 10 A | 1.4 A |
| Operating Voltage Range | 3 V to 28 V | — |
| Switch Technology | N-channel vertical power MOSFET | — |
| Input Type | Logic-level CMOS compatible | — |
| Package | PG-TO252-5 (DPAK-5) | PG-SOT223-4 (4-pin, 3+Tab) |
| Number of Pins | 5 (4 + Tab) | — |
| Operating Junction Temperature | -40 °C to +150 °C | — |
| ESD Protection (HBM) | ±8 kV (output pin) | — |
| AEC-Q100 Qualification | Grade 1 qualified | Yes |
| Integrated Protections | Current limit, overtemperature shutdown, overvoltage clamp, ESD, ground-loss protection | — |
| Diagnostic Output | Open-drain status feedback pin | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Topology | — | High-Side, N-Channel MOSFET |
| On-State Resistance (Rdson) | — | 150 milliohm (typical) |
| Supply Voltage Range | — | -3 V to 45 V |
| Overvoltage Protection | — | Yes (load-dump resilient) |
| Undervoltage Shutdown | — | Yes |
| Short Circuit Protection | — | Yes |
| Thermal Shutdown | — | Yes (with auto-restart) |
| Current Limitation | — | Yes |
| Input Logic Type | — | Current-Controlled, CMOS-compatible |
| Inductive Load Switching | — | Yes |
| Operating Temperature | — | -40C to +125C (automotive grade) |
| Technology | — | Smart Power (vertical N-DMOS + charge pump + CMOS logic) |