CGD65B130S2 vs CGD65B130SH2 Comparison
Detailed side-by-side comparison of CGD65B130S2 by Cambridge GaN Devices and CGD65B130SH2 by Cambridge GaN Devices. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Cambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ ActiveCambridge GaN Devices
CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN
CGD65B130SH2 ✓ ActiveSpecification Comparison
| Parameter | CGD65B130S2 | CGD65B130SH2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $1.74 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Transistor Type | GaN HEMT (enhancement mode, N-channel) | N-Channel GaN HEMT (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| On-Resistance (RDS(on)) | 130 mΩ (typical) | — |
| Continuous Drain Current (ID) | 12 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) | — |
| Package | 8-DFN 5x6 mm with exposed thermal pad | 8-DFN (5x6 mm), Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 °C to +150 °C (junction) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) | — |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | — |
| Substrate Technology | GaN-on-silicon | — |
| Part Number | — | CGD65B130SH2 |
| Continuous Drain Current (ID) at 25°C | — | 12 A |
| On-Resistance RDS(on) (typical, per product page) | — | 55 mΩ |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | — | 182 mΩ |
| On-Resistance Range (datasheet) | — | 130 to 350 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2.2 V to 4.2 V |
| Total Gate Charge Qg | — | 1.9 nC |
| Technology | — | GaN-on-silicon (ICeGaN®) |
| Integrated Features | — | ICeGaN® gate, Current Sense, NL³ protection circuit |
| Operating Mode | — | Enhancement-mode (normally-off) |
| Compliance / RoHS | — | Compliant (per DigiKey listing) |