CXDB4ABAM-MK vs K4F8E304HB-MGCJ Comparison
Detailed side-by-side comparison of CXDB4ABAM-MK by CXMT and K4F8E304HB-MGCJ by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4F8E304HB-MGCJ
K4F8E304HB-MGCJ - 8Gb LPDDR4 x32 3733Mbps DRAM | Samsung
K4F8E304HB-MGCJ β ActiveSpecification Comparison
| Parameter | CXDB4ABAM-MK | K4F8E304HB-MGCJ |
|---|---|---|
| Brand | CXMT | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $19.09 | $2.55 |
| Memory Type | LPDDR4X SDRAM | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 8Gb | 8 Gbit |
| Data Rate | 3733 MHz | 3733 Mbps |
| Package | BGA-200 (15x10x0.8 mm) | 200-ball FBGA (TFBGA-200) |
| Supply Voltage (VDD1) | 1.8V | β |
| Supply Voltage (VDD2) | 1.1V | β |
| I/O Voltage (VDDQ) | 0.6V | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| RoHS | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 200 | β |
| Organization | [DATA_NEEDED: memory organization] | 256M x32 |
| CAS Latency | [DATA_NEEDED: CAS latency] | β |
| Refresh | [DATA_NEEDED: refresh rate] | β |
| Lead-Free | Yes | β |
| Clock Frequency | β | 1866 MHz |
| Core Supply Voltage (VDD) | β | 1.1 V |
| Interface Supply Voltage (VDDQ) | β | 1.1 V |
| I/O Supply (VDD2) | β | 1.8 V |
| Interface Type | β | Parallel (LPDDR4) |
| Operating Temperature | β | -25C to +85C |
| Power-Saving Modes | β | Deep power-down, self-refresh |
| Standard Compliance | β | JEDEC LPDDR4 |
| RoHS Status | β | Compliant |
| Typical Applications | β | Mobile, AI, VR, wearables, industrial controllers |