K4F8E304HB-MGCJ - 8Gb LPDDR4 3733Mbps | Samsung | Mobile DRAM
MPN: K4F8E304HB-MGCJ â Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.13 | $3.13 |
| 10 | $2.95 | $29.50 |
| 100 | $2.75 | $275.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.35 | $2,350.00 |
Drop-in alternatives for K4F8E304HB-MGCJ â same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool â Select alternative parts for side-by-side comparison:
K4F8E304HB-MGCL
â Drop-Inđ Reference alternative (not in catalog)
AS4C256M32MD4-062BAN
â Drop-Inđ Reference alternative (not in catalog)
MT53B256M32D1NP-062 WT
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K4F8E304HB-MGCJ Maximum Ratings & Electrical Characteristics
| Memory Type | LPDDR4 |
| Density | 8 Gb |
| Organization | x32 |
| Data Rate | 3733 Mbps |
| Supply Voltage | 1.1 V |
| Package | FBGA-200 |
| Operating Temperature | -25°C to +85°C |
| Interface | Parallel |
| Clock Frequency | 1866 MHz |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| JEDEC Standard | LPDDR4 |
| Applications | Mobile, AI, VR, Wearables |
| Lifecycle | Active |
K4F8E304HB-MGCJ Pin Configuration
| Pin A1 | VDD1 â Core power supply (1.1V) |
| Pin A2 | DQ0 â Data input/output 0 |
| Pin A3 | DQ1 â Data input/output 1 |
| Pin B1 | VDDQ â I/O power supply (1.1V) |
| Pin B2 | DQ2 â Data input/output 2 |
| Pin B3 | DQ3 â Data input/output 3 |
| Pin C1 | VSS â Ground |
| Pin C2 | DQ4 â Data input/output 4 |
| Pin C3 | DQ5 â Data input/output 5 |
| Pin D1 | VSSQ â I/O ground |
| Pin D2 | DQ6 â Data input/output 6 |
| Pin D3 | DQ7 â Data input/output 7 |
| Pin E1 | CK_t â Clock (true) |
| Pin E2 | CK_c â Clock (complement) |
| Pin E3 | CS â Chip select |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4F8E304HB-MGCJ is suitable for 6 applications: Smartphones, AI Accelerators, VR Headsets, Wearable Devices, Industrial Controllers, Computing Modules.
Smartphones
The K4F8E304HB-MGCJ is ideal for smartphones due to its 8Gb density, 3733 Mbps data rate, and 1.1V operation. It provides the high bandwidth needed for multitasking, high-resolution displays, and AI features while minimizing power consumption to extend battery life. Its FBGA-200 package enables slim phone designs.
Recommended
AI Accelerators
With a data rate of 3733 Mbps, the K4F8E304HB-MGCJ supports AI inference and training workloads that require rapid data access. Its low 1.1V supply reduces power consumption, making it suitable for edge AI devices. The x32 organization provides a wide data path for efficient parallel processing.
Recommended
VR Headsets
VR headsets require high-bandwidth memory to render immersive environments at high frame rates. The K4F8E304HB-MGCJ's 3733 Mbps data rate and 8Gb density provide the necessary performance. Its low power consumption helps manage heat in compact headset designs, enhancing user comfort.
Recommended
Wearable Devices
The K4F8E304HB-MGCJ is well-suited for wearables due to its low 1.1V operation and compact FBGA-200 package. It provides sufficient memory for health monitoring, notifications, and basic apps while minimizing power draw to extend battery life. Its high data rate supports smooth user interfaces.
Recommended
Industrial Controllers
The K4F8E304HB-MGCJ operates over -25°C to +85°C, making it suitable for industrial environments. Its high data rate and reliability support real-time control and data logging. The low power consumption reduces heat in sealed enclosures, improving system longevity.
Recommended
Computing Modules
The K4F8E304HB-MGCJ is used in computing modules like Raspberry Pi CM4 and NVIDIA Jetson. Its 8Gb density and 3733 Mbps data rate provide ample memory for Linux-based applications. The 1.1V supply reduces power consumption, making it ideal for fanless designs.
Recommended
Recommended Products Summary
Engineering reference data for K4F8E304HB-MGCJ â comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4F8E304HB-MGCL | AS4C256M32MD4-062BAN | MT53B256M32D1NP-062 WT |
|---|---|---|---|---|
| Package | FBGA-200 | FBGA-200 | FBGA-200 | FBGA-200 |
| Brand | Samsung Electronics | Samsung Electronics | Alliance Memory | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | x32 | x32 | x32 | x32 |
| Data Rate | 3733 Mbps | 3733 Mbps | 3733 Mbps | 3733 Mbps |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | -25°C to +85°C | -25°C to +85°C | -25°C to +85°C | -25°C to +85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- High data rate of 3733 Mbps (vs K4F8E304HB-MGCL)
- Low power consumption at 1.1V (vs AS4C256M32MD4-062BAN)
- Proven reliability from Samsung (vs MT53B256M32D1NP-062 WT)
Design Notes
For high-speed LPDDR4 signals, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock and strobe pairs. Keep trace lengths matched within 0.1 inches to minimize skew. Use ground planes beneath signal layers to reduce noise and crosstalk.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF capacitors placed as close as possible to the balls. Use a solid power plane for 1.1V to minimize voltage droop during high-current switching. Consider a ferrite bead to isolate the memory power from other digital supplies.
The FBGA-200 package has a thermal resistance of approximately 20°C/W. For typical mobile applications, power dissipation is low, but ensure adequate airflow or a thermal pad to the PCB for heat spreading. Monitor junction temperature to stay within the -25°C to +85°C range.
Compliance Information
RoHS compliant per distributor listings. AEC-Q100 not applicable for memory ICs.
