DG413DJ-E3 vs DG413 Comparison

Detailed side-by-side comparison of DG413DJ-E3 by Vishay Intertechnology and DG413 by Analog Devices. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Vishay Intertechnology
DG413DJ-E3 DG413DJ-E3 - Quad SPST CMOS Analog Switch 35 Ohm | Vishay

DG413DJ-E3 - Quad SPST CMOS Analog Switch 35 Ohm | Vishay

DG413DJ-E3 ✓ Active

Specification Comparison

Parameter DG413DJ-E3 DG413
Brand Vishay Intertechnology Analog Devices
Category Interface ICs Logic ICs
Lifecycle Status Active Active
Product Type Quad SPST CMOS Analog Switch —
Number of Circuits 4 —
Switch Circuit SPST - NO/NC (2 NO, 2 NC) —
On-Resistance (Max) 35 ohm —
Operating Supply Voltage 5 V to 44 V —
Dual Supply Range +/-13.5 V to +/-16.5 V ±4.5 V to ±20 V
Charge Injection 5 pC Reduced vs DG211/DG212 (value [DATA_NEEDED: charge injection value])
Crosstalk -85 dB at 1 MHz —
Off Capacitance CS(off) 9 pF —
Off Capacitance CD(off) 9 pF —
Operating Temperature Range -40 C to +85 C —
Package 16-PDIP (0.300 in, 7.62 mm) SOIC-16 (DY suffix)
Mounting Type Through Hole Surface Mount
Logic Inputs TTL and CMOS compatible —
RoHS Status Compliant (E3 suffix) Compliant
Packaging Tube —
Switch Configuration — Quad SPST (2 NC + 2 NO)
On-Resistance (rDS on) — 35 ohm max
Turn-On Time (tON) — 150 ns max
Turn-Off Time (tOFF) — 100 ns max
Maximum Supply Voltage — 44 V
Single Supply Range — +10 V to +30 V
Analog Signal Range — 15 V (within rails), up to 40 Vp-p with 44 V process
Digital Input Compatibility — TTL and CMOS
Technology — High-voltage silicon-gate CMOS, epi layer latch-up immune
Power Dissipation — 0.35 mW (ultra low, typ per family data)
Number of Channels — 4
Operating Temperature — [DATA_NEEDED: operating temperature range]

Datasheets & Resources

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