EP1S30F780C8N vs EP1S40F780C8N Comparison
Detailed side-by-side comparison of EP1S30F780C8N by Intel and EP1S40F780C8N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Intel
EP1S30F780C8N - Stratix 32470 LEs FPGA, 597 I/O, 780-FBGA | Intel
EP1S30F780C8N β Last Time Buy
Specification Comparison
| Parameter | EP1S30F780C8N | EP1S40F780C8N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Last_time_buy | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $510.00 | $130.00 |
| Family | Stratix | Stratix |
| Series | Stratix (EP1S) | EP1S |
| Logic Elements (LEs) | 32,470 | β |
| Embedded Memory (RAM bits) | 3,317,184 | β |
| Total Memory Bits | 3,317,184 | β |
| User I/Os | 597 | β |
| LABs (Logic Array Blocks) | 3,247 | β |
| Process Technology | 130 nm CMOS | β |
| Supply Voltage (Core) | 1.5 V | 1.5 V |
| Speed Grade | C8 (-8, faster bin) | C8 (commercial) |
| Operating Temperature | 0 Β°C to +85 Β°C (Commercial) | 0 Β°C to +85 Β°C |
| Package | 780-ball FC-FBGA (FineLine BGA), 29 Γ 29 mm, 1 mm pitch | 780-ball FCBGA (FineLine BGA), 29 mm x 29 mm, 1 mm pitch |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Configuration | SRAM-based, JTAG / Passive Serial / Passive Parallel | β |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Logic Elements | β | 41,250 |
| Embedded Memory | β | 3,423,744 bits |
| Embedded Multipliers | β | 615 (18-bit x 18-bit) |
| Logic Family | β | CMOS |
| I/O Standard Support | β | LVDS, LVTTL, LVCMOS, SSTL, HSTL, PCI, PCI-X |
| Maximum LVDS Data Rate | β | 840 Mbps |
| PLL Blocks | β | Up to 12 |
| Memory Type | β | TriMatrix (MRAM, M512, M4K blocks) |
| External Memory Interface | β | DDR, DDR-II, QDR, SDRAM |
| Configuration Method | β | Passive serial, Fast passive parallel, JTAG |
| Design Software | β | Quartus II |