EPF10K100EFC484-1X vs EPF10K100EFC484-3N Comparison

Detailed side-by-side comparison of EPF10K100EFC484-1X by Intel and EPF10K100EFC484-3N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter EPF10K100EFC484-1X EPF10K100EFC484-3N
Brand Intel Intel
Category FPGA & CPLD FPGA & CPLD
Lifecycle Status NRND Obsolete
Family FLEX 10KE FLEX 10KE
Series FLEX-10KE® —
Logic Elements / Cells 4992 4992
System Gates 100,000 —
Logic Array Blocks (LABs) 624 624
Total RAM Bits 49,152 —
User I/O Count 338 —
Number of I/O Pins 338 (package provides up to 488 bonded I/O pads) —
Supply Voltage (Core) 2.5 V (2.375 V – 2.625 V) —
Supply Voltage (I/O) 3.3 V —
Process Technology 0.22 µm CMOS 0.22 µm CMOS
Maximum Internal Frequency 333.33 MHz —
Propagation Delay 0.6 ns (per logic element, typical) —
Package 484-FBGA (FineLine BGA, 23 × 23 mm) 484-ball FineLine BGA (FC484 / FBGA-484)
Operating Temperature 0 °C to +70 °C (commercial) —
Mounting Type Surface Mount Surface Mount (BGA)
Programming Interface JTAG / serial (ByteBlaster-compatible) —
RoHS Status [DATA_NEEDED: RoHS status] —
Total Gates — 100,000
Embedded Memory (EAB) — 49,152 bits (12 EABs)
User I/Os — 338
Core Voltage (VCCINT) — 2.5 V
I/O Voltage (VCCIO) — MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank)
Internal Performance — 200 MHz
Speed Grade — -3 (fastest commercial bin)
Temperature Grade — Commercial (0 °C to +70 °C)
Configuration Method — SRAM (external EPROM/Flash/JTAG required at power-up)
Lead-Free / RoHS — Yes (N suffix = lead-free)

Datasheets & Resources

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