GAN111-650WSB vs GAN111-650WSBQ Comparison
Detailed side-by-side comparison of GAN111-650WSB by Nexperia and GAN111-650WSBQ by Nexperia. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | GAN111-650WSB | GAN111-650WSBQ |
|---|---|---|
| Brand | Nexperia | Nexperia |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $9.42 |
| Manufacturer | Nexperia | — |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| On-Resistance RDS(on) (typ) | 97 mΩ | — |
| Continuous Drain Current (ID, at Ta) | 21 A | — |
| Power Dissipation (PD, at Ta) | 107 W | — |
| Technology | GaN HEMT H2 (cascode, normally-off) | GaN HEMT H2 + low-voltage Si MOSFET cascode |
| Polarity / Channel Type | N-Channel | — |
| Package | TO-247 (SOT429) through-hole, 3-lead | TO-247-3L (SOT429), Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Configuration | Single FET | Single FET |
| Gate Drive Compatibility | Standard silicon MOSFET gate drive (0-12 V typical) | — |
| Operating Mode | Normally-off (cascode) | — |
| Target Applications | SMPS, PFC, OBC, solar inverter, industrial drives | — |
| RoHS Status | Compliant | Compliant |
| Orderable Part Suffix | WSBQ (tape-and-reel/ammopack) | — |
| Polarity | — | N-Channel, normally-off (GaN FET) |
| On-State Resistance (RDS(on)) | — | 97 mOhm |
| Continuous Drain Current (ID) | — | 21 A (Ta) |
| Power Dissipation (PD) | — | 107 W (Ta) |
| Drive Voltage | — | 10 V |
| Operating Temperature Range | — | -55 C to +175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Thermal Resistance (Rth(j-c)) | — | [DATA_NEEDED: junction-to-case thermal resistance] |