GAN111-650WSB vs GAN111-650WSBQ 对比
详细并排对比 GAN111-650WSB 出自 Nexperia 和 GAN111-650WSBQ 出自 Nexperia。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | GAN111-650WSB | GAN111-650WSBQ |
|---|---|---|
| 品牌 | Nexperia | Nexperia |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.95 | $9.42 |
| Manufacturer | Nexperia | — |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| On-Resistance RDS(on) (typ) | 97 mΩ | — |
| Continuous Drain Current (ID, at Ta) | 21 A | — |
| Power Dissipation (PD, at Ta) | 107 W | — |
| Technology | GaN HEMT H2 (cascode, normally-off) | GaN HEMT H2 + low-voltage Si MOSFET cascode |
| Polarity / Channel Type | N-Channel | — |
| 封装 | TO-247 (SOT429) through-hole, 3-lead | TO-247-3L (SOT429), Through Hole |
| 安装类型 | Through Hole | Through Hole |
| Configuration | Single FET | Single FET |
| Gate Drive Compatibility | Standard silicon MOSFET gate drive (0-12 V typical) | — |
| Operating Mode | Normally-off (cascode) | — |
| Target Applications | SMPS, PFC, OBC, solar inverter, industrial drives | — |
| RoHS 状态 | Compliant | Compliant |
| Orderable Part Suffix | WSBQ (tape-and-reel/ammopack) | — |
| Polarity | — | N-Channel, normally-off (GaN FET) |
| On-State Resistance (RDS(on)) | — | 97 mOhm |
| Continuous Drain Current (ID) | — | 21 A (Ta) |
| Power Dissipation (PD) | — | 107 W (Ta) |
| Drive Voltage | — | 10 V |
| 工作温度范围 | — | -55 C to +175 C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Thermal Resistance (Rth(j-c)) | — | [DATA_NEEDED: junction-to-case thermal resistance] |