H5AN8G6NAFR-UHC vs K4A8G165WC-BCTD Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-UHC by SK hynix and K4A8G165WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveSamsung Electronics
K4A8G165WC-BCTD
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WC-BCTD β ActiveSpecification Comparison
| Parameter | H5AN8G6NAFR-UHC | K4A8G165WC-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.12 | $41.20 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | 2666 Mbps (DDR4-2666) |
| Package | FBGA-96 | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Operating Temperature | 0Β°C to +85Β°C | 0C to +95C |
| Number of Terminals | 96 | β |
| Package Code | TFBGA | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | β |
| Burst Length | 8, 4 (with burst chop) | β |
| Refresh | Auto self-refresh | β |
| Operating Voltage Range | β | 1.14 V to 1.26 V |
| Clock Frequency | β | 1.333 GHz |
| Mounting Type | β | Surface Mount |
| Die Revision | β | C-die |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| CRC Function | β | Yes |
| ZQ Calibration | β | Yes (240 ohm resistor to GND) |
| Dynamic On-Chip Termination (ODT) | β | Yes |
| Data Mask Function | β | Yes |
| RoHS Status | β | Compliant |