H5AN8G6NCJR-VKC vs NT5CC256M16ER-EKT Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-VKC by SK hynix and NT5CC256M16ER-EKT by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NCJR-VKC
H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-VKC β ActiveNanya Technology
NT5CC256M16ER-EKT
NT5CC256M16ER-EKT - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16ER-EKT β ActiveSpecification Comparison
| Parameter | H5AN8G6NCJR-VKC | NT5CC256M16ER-EKT |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $60.00 | $22.00 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4 Gb |
| Organization | 512M x 16 | 256M x 16 |
| Data Rate | 2666 Mbps | β |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | β |
| Operating Temperature | 0Β°C to +95Β°C | β |
| Package | FBGA-96 | 96-ball TFBGA |
| Operating Current (IDD2N) | 28 mA | β |
| Operating Current (IDD4R) | 45 mA | β |
| Burst Length | 8 (BC4) | 8 and 4 (with burst chop) |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 13 |
| Row Address Bits | [DATA_NEEDED: Row Address Bits] | β |
| Column Address Bits | [DATA_NEEDED: Column Address Bits] | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS | Compliant | Compliant |
| Supply Voltage | β | 1.35 V (1.5 V compatible) |
| Speed Grade | β | DDR3L-1866 (1866 Mbps) |
| Timing | β | 13-13-13 |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| Interface | β | 16-bit |
| On-Die Termination | β | Yes (dynamic) |
| ZQ Calibration | β | Yes |
| Auto Self-Refresh | β | Yes |