H5AN8G6NDJR-XNC vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR-XNC | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | β |
| Memory Organization | 512M x16 | β |
| Data Rate | 3200 Mbps | 2400 MT/s |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | β |
| Package | FBGA-96 (13x7.5 mm) | FBGA-96 |
| Number of Terminals | 96 | 96 |
| Maximum Operating Temperature | 85 Β°C | β |
| Input/Output Type | COMMON | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | Yes |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | β |
| Data Mask | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| Write Leveling | Yes | β |
| Asynchronous Reset | Yes | β |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0Β°C to +85Β°C |
| Package Code | β | TFBGA |
| RoHS Compliant | β | Yes |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | 8, 4 (with burst chop) |
| Refresh | β | Auto self-refresh |