H5AN8G6NDJR-XNC vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR-XNC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $12.57 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Memory Size | 8 Gb | 8 Gb (1 GB) |
| Memory Organization | 512M x16 | 512M x 16 |
| Data Rate | 3200 Mbps | 2400 Mbps (PC4-19200) |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | β |
| Package | FBGA-96 (13x7.5 mm) | 96-ball FBGA (PBGA96) |
| Number of Terminals | 96 | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Input/Output Type | COMMON | β |
| RoHS | Compliant | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | Yes |
| Data Mask | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes | β |
| Write Leveling | Yes | β |
| Asynchronous Reset | Yes | Yes |
| Supply Voltage | β | 1.2 V (1.14 V to 1.26 V) |
| Technology | β | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | β | 0.8 mm |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | -40C to +95C |
| Interface | β | DDR4 (Double Data Rate, synchronous) |
| On-Die Termination | β | Yes (ODT with dynamic ODT) |
| CRC / CA Parity | β | Yes (CRC function) |
| Refresh | β | Auto-refresh and self-refresh |
| RoHS Status | β | Compliant |