K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
MPN: K4A8G165WB-BCRC β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $45.13 | $45.13 |
| 10 | $42.5 | $425.00 |
| 100 | $39.8 | $3,980.00 |
| 500 | $37.2 | $18,600.00 |
| 1,000 | $35 | $35,000.00 |
Drop-in alternatives for K4A8G165WB-BCRC β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4A8G165WB-BCPB
β Drop-Inβ 99,999 In Stock
$2.3 / Unit
View Datasheet βK4A8G165WB-BCTD
β Drop-Inβ 99,999 In Stock
$37 / Unit
View Datasheet βK4A8G165WC-BCRC
β Drop-Inπ Reference alternative (not in catalog)
K4A8G165WB-BIRC
β Drop-Inβ 99,999 In Stock
$39.5 / Unit
View Datasheet βMT41K512M16HA-125
β Drop-Inπ Reference alternative (not in catalog)
H5AN8G16NCJR-VKC
β Drop-Inπ Reference alternative (not in catalog)
K4A8G165WB-BCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 8 Gb |
| Memory Organization | 512M x 16 |
| Data Rate | 2400 Mbps |
| Supply Voltage | 1.2 V |
| Package | FBGA-96 |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] |
| Interface | DDR4 |
| Mounting Type | Surface Mount |
| RoHS | Compliant |
| Lead-Free | Yes |
| Number of Pins | 96 |
| Clock Frequency | 1200 MHz |
| CAS Latency | [DATA_NEEDED: CAS latency] |
| Refresh | Auto-refresh and self-refresh |
K4A8G165WB-BCRC Pin Configuration
| Pin A1 | VDD β Power supply (1.2V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data input/output 2 |
| Pin B3 | DQ3 β Data input/output 3 |
| Pin C1 | VDDQ β Power supply for output buffers |
| Pin C2 | DQ4 β Data input/output 4 |
| Pin C3 | DQ5 β Data input/output 5 |
| Pin D1 | VSSQ β Ground for output buffers |
| Pin D2 | DQ6 β Data input/output 6 |
| Pin D3 | DQ7 β Data input/output 7 |
| Pin E1 | VREFCA β Reference voltage for command/address |
| Pin E2 | A0 β Address input 0 |
| Pin E3 | A1 β Address input 1 |
| Pin F1 | VDD β Power supply (1.2V) |
| Pin F2 | A2 β Address input 2 |
| Pin F3 | A3 β Address input 3 |
| Pin G1 | VSS β Ground |
| Pin G2 | A4 β Address input 4 |
| Pin G3 | A5 β Address input 5 |
| Pin H1 | VDDQ β Power supply for output buffers |
| Pin H2 | A6 β Address input 6 |
| Pin H3 | A7 β Address input 7 |
| Pin J1 | VSSQ β Ground for output buffers |
| Pin J2 | A8 β Address input 8 |
| Pin J3 | A9 β Address input 9 |
| Pin K1 | VDD β Power supply (1.2V) |
| Pin K2 | A10/AP β Address input 10 / Auto-precharge |
| Pin K3 | A11 β Address input 11 |
| Pin L1 | VSS β Ground |
| Pin L2 | A12/BC β Address input 12 / Burst chop |
| Pin L3 | A13 β Address input 13 |
| Pin M1 | VDDQ β Power supply for output buffers |
| Pin M2 | A14 β Address input 14 |
| Pin M3 | A15 β Address input 15 |
| Pin N1 | VSSQ β Ground for output buffers |
| Pin N2 | BA0 β Bank address 0 |
| Pin N3 | BA1 β Bank address 1 |
| Pin P1 | VDD β Power supply (1.2V) |
| Pin P2 | BA2 β Bank address 2 |
| Pin P3 | RAS_n β Row address strobe (active low) |
| Pin R1 | VSS β Ground |
| Pin R2 | CAS_n β Column address strobe (active low) |
| Pin R3 | WE_n β Write enable (active low) |
| Pin T1 | VDDQ β Power supply for output buffers |
| Pin T2 | CS_n β Chip select (active low) |
| Pin T3 | CKE β Clock enable |
| Pin U1 | VSSQ β Ground for output buffers |
| Pin U2 | ODT β On-die termination |
| Pin U3 | CK_t β Clock (true) |
| Pin V1 | VDD β Power supply (1.2V) |
| Pin V2 | CK_c β Clock (complement) |
| Pin V3 | RESET_n β Reset (active low) |
| Pin W1 | VSS β Ground |
| Pin W2 | DM0 β Data mask 0 |
| Pin W3 | DQS0_t β Data strobe 0 (true) |
| Pin Y1 | VDDQ β Power supply for output buffers |
| Pin Y2 | DQS0_c β Data strobe 0 (complement) |
| Pin Y3 | DQ8 β Data input/output 8 |
| Pin AA1 | VSSQ β Ground for output buffers |
| Pin AA2 | DQ9 β Data input/output 9 |
| Pin AA3 | DQ10 β Data input/output 10 |
| Pin AB1 | VDD β Power supply (1.2V) |
| Pin AB2 | DQ11 β Data input/output 11 |
| Pin AB3 | DQ12 β Data input/output 12 |
| Pin AC1 | VSS β Ground |
| Pin AC2 | DQ13 β Data input/output 13 |
| Pin AC3 | DQ14 β Data input/output 14 |
| Pin AD1 | VDDQ β Power supply for output buffers |
| Pin AD2 | DQ15 β Data input/output 15 |
| Pin AD3 | DM1 β Data mask 1 |
| Pin AE1 | VSSQ β Ground for output buffers |
| Pin AE2 | DQS1_t β Data strobe 1 (true) |
| Pin AE3 | DQS1_c β Data strobe 1 (complement) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4A8G165WB-BCRC is suitable for 6 applications: Server Memory Modules, Industrial PCs, Network Routers and Switches, Automotive Infotainment and ADAS, High-Performance Embedded Computing, Data Acquisition Systems.
Server Memory Modules
The K4A8G165WB-BCRC is ideal for server memory modules (DIMMs) where high density and bandwidth are critical. Its 8Gb capacity and 2400 Mbps data rate enable high-performance computing, supporting virtualization, big data analytics, and cloud workloads. The 1.2V operation reduces power consumption in data centers, lowering cooling costs. When used in a dual-rank configuration, multiple devices can be combined to achieve capacities up to 32GB per module. The x16 organization simplifies PCB routing and reduces the number of chips needed, improving signal integrity and reducing latency.
Recommended
Industrial PCs
In industrial PCs, the K4A8G165WB-BCRC provides reliable, high-speed memory for real-time control, data acquisition, and HMI applications. Its 2400 Mbps data rate ensures fast processing of sensor data and control loops, while the 1.2V supply minimizes heat generation in sealed enclosures. The 96-ball FBGA package withstands vibration and thermal cycling, making it suitable for harsh industrial environments. The device supports error correction (ECC) when paired with an ECC-capable controller, enhancing data integrity in critical applications. Its wide operating temperature range (if available) ensures operation in extreme conditions.
Recommended
Network Routers and Switches
The K4A8G165WB-BCRC is well-suited for network routers and switches, where high bandwidth and low latency are essential for packet processing. Its 2400 Mbps data rate supports line-rate forwarding and routing table lookups. The 8Gb capacity allows for large routing tables and buffering of high-speed traffic. The 1.2V operation reduces power consumption in network equipment, which often runs 24/7. The x16 interface simplifies connection to network processors and ASICs, enabling compact board designs. The device's on-die termination (ODT) improves signal integrity at high speeds, reducing bit errors.
Recommended
Automotive Infotainment and ADAS
The K4A8G165WB-BCRC is suitable for automotive infotainment and ADAS systems, providing high-speed memory for navigation, multimedia, and sensor fusion. Its 2400 Mbps data rate supports real-time processing of camera and radar data. The 1.2V supply reduces power consumption, which is critical in vehicles. The 96-ball FBGA package is AEC-Q100 qualified (if applicable), ensuring reliability in automotive temperature ranges. The device's high density allows for storing maps, media, and application code. It is designed to meet the stringent quality and reliability requirements of the automotive industry.
Recommended
High-Performance Embedded Computing
For high-performance embedded computing, the K4A8G165WB-BCRC offers the bandwidth and capacity needed for applications like edge AI, image processing, and real-time analytics. Its 2400 Mbps data rate enables fast data transfer between the processor and memory, reducing bottlenecks. The 8Gb capacity supports large datasets and complex algorithms. The 1.2V operation is efficient for battery-powered or thermally constrained systems. The x16 interface is compatible with many embedded processors and FPGAs, simplifying integration. The device's low power consumption extends battery life in portable devices.
Recommended
Data Acquisition Systems
The K4A8G165WB-BCRC is ideal for data acquisition systems that require high-speed, high-capacity memory for buffering and processing large volumes of data. Its 2400 Mbps data rate ensures no data loss during high-speed sampling. The 8Gb capacity allows for extended recording times. The 1.2V supply reduces power consumption in portable or remote systems. The x16 organization provides a wide data path, enabling efficient data transfer to ADCs and DSPs. The device's low latency is critical for real-time signal processing applications.
Recommended
Recommended Products Summary
Engineering reference data for K4A8G165WB-BCRC β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4A8G165WB-BCPB | K4A8G165WB-BCTD | K4A8G165WC-BCRC | K4A8G165WB-BIRC | MT41K512M16HA-125 | H5AN8G16NCJR-VKC |
|---|---|---|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 2400 Mbps | 2400 Mbps | [DATA_NEEDED] | 2400 Mbps | 2400 Mbps | 2400 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature Range | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | Industrial | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- High density 8Gb in x16 organization (vs K4A4G165WG-BIWE)
- 2400 Mbps data rate (vs K4A8G165WB-BCTD)
- Cross-brand availability (vs MT41K512M16HA-125)
Design Notes
The K4A8G165WB-BCRC requires a stable 1.2V supply (VDD) and 1.2V for VDDQ. Use low-ESR ceramic capacitors (e.g., 0.1uF and 1uF) placed close to each power pin to decouple high-frequency noise. Additionally, a bulk capacitor (10uF) should be placed near the device to handle transient currents. Ensure the power supply can deliver the peak current required during read/write operations, which can be several hundred milliamps.
For the 96-ball FBGA package, follow the layout guidelines in the Samsung datasheet. Route DQ, DQS, and clock signals with controlled impedance (e.g., 50 ohms single-ended, 100 ohms differential). Keep trace lengths matched within +/- 10 mils for DQ and DQS groups to ensure signal integrity. Place the device close to the memory controller to minimize trace length and reduce crosstalk. Use ground planes under the device to provide a low-inductance return path.
The K4A8G165WB-BCRC dissipates power based on operating frequency and load. Ensure adequate thermal management by providing a thermal pad or via array under the FBGA package to conduct heat to the PCB. The maximum junction temperature should not be exceeded; refer to the datasheet for thermal resistance values. In high-ambient-temperature environments, consider forced air cooling or heat sinks to maintain reliable operation.
Compliance Information
RoHS compliant per LCSC and Samsung product pages. Lead-free per datasheet. AEC-Q100 not specified for this part.
