H5AN8G6NDJR-XNC vs K4A8G165WB-BCTD Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and K4A8G165WB-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $37.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | β |
| Memory Organization | 512M x16 | β |
| Data Rate | 3200 Mbps | 2666 Mbps/pin (PC4-2666) |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | β |
| Package | FBGA-96 (13x7.5 mm) | 96-ball FBGA |
| Number of Terminals | 96 | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Input/Output Type | COMMON | β |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | β |
| Data Mask | Yes | Yes |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes | β |
| Write Leveling | Yes | β |
| Asynchronous Reset | Yes | β |
| Organization | β | 512M x 16 |
| Total Density | β | 8 Gb |
| Supply Voltage | β | 1.2 V |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| CAS Latency | β | [DATA_NEEDED: CL value] |
| tRCD | β | [DATA_NEEDED: tRCD value] |
| tRP | β | [DATA_NEEDED: tRP value] |
| Refresh | β | Auto-refresh, self-refresh |
| On-Die Termination | β | Yes (ODT) |