H5AN8G6NDJR vs H5AN8G6NAFR Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and H5AN8G6NAFR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR | H5AN8G6NAFR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) | 2400 MT/s |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA (13mm x 7.5mm) | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Operating Temperature | — | 0°C to +85°C |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |
| Write Leveling | — | Yes |