H5AN8G6NAFR - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix
MPN: H5AN8G6NAFR ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.1944 | $0.19 |
| 10 | $0.18 | $1.80 |
| 100 | $0.16 | $16.00 |
| 500 | $0.14 | $70.00 |
| 1,000 | $0.12 | $120.00 |
Drop-in alternatives for H5AN8G6NAFR — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
H5AN8G6NAFR-UHC
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View Datasheet →H5AN8G6NCJR-VKC
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View Datasheet →H5AN8G6NDJR
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View Datasheet →MT40A512M16JY-075E
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View Datasheet →K4A8G165WB-BCWE
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$6 / Unit
View Datasheet →AS4C512M16D4A-62BCN
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View Datasheet →H5AN8G6NAFR Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 512M x 16 |
| Supply Voltage | 1.2 V |
| Data Rate | 2400 MT/s |
| Package | 96-ball FBGA |
| Operating Temperature | 0°C to +85°C |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| RoHS Compliant | Yes |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
| CRC | Yes |
| Write Leveling | Yes |
H5AN8G6NAFR Pin Configuration
| Pin A1 | VDD — Power supply |
| Pin A2 | VSS — Ground |
| Pin A3 | DQ0 — Data input/output 0 |
| Pin A4 | DQ1 — Data input/output 1 |
| Pin A5 | VDDQ — Power supply for output |
| Pin A6 | DQ2 — Data input/output 2 |
| Pin A7 | DQ3 — Data input/output 3 |
| Pin A8 | VSSQ — Ground for output |
| Pin A9 | DQ4 — Data input/output 4 |
| Pin A10 | DQ5 — Data input/output 5 |
| Pin A11 | VDDQ — Power supply for output |
| Pin A12 | DQ6 — Data input/output 6 |
| Pin A13 | DQ7 — Data input/output 7 |
| Pin A14 | VSS — Ground |
| Pin A15 | VDD — Power supply |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN8G6NAFR is suitable for 6 applications: Server Main Memory, Networking Equipment, Data Center Storage, High-Performance Computing, Embedded Systems, Consumer Electronics.
Server Main Memory
The H5AN8G6NAFR provides high-density 8Gb memory with 2400 MT/s bandwidth, making it ideal for server DIMMs. Its 1.2V operation reduces power consumption in data centers, and the 512M x 16 organization allows for flexible module configurations. The device supports ECC and error detection features, ensuring reliability in mission-critical server environments. With a 96-ball FBGA package, it enables compact module designs that maximize memory capacity per board.
Recommended
Networking Equipment
In networking switches and routers, the H5AN8G6NAFR provides the high bandwidth and low latency required for packet buffering and forwarding. Its 2400 MT/s data rate supports line-rate processing, while the 8Gb density allows for large routing tables and flow caches. The device's low 1.2V supply reduces thermal load in dense chassis, and its FBGA package enables high-density board layouts. The auto self-refresh feature helps maintain data integrity during idle periods, which is critical for network reliability.
Recommended
Data Center Storage
The H5AN8G6NAFR is used in storage controllers and SSDs as cache memory, providing fast access to frequently used data. Its 8Gb density and 2400 MT/s speed enable high-throughput caching, while the 1.2V supply minimizes power consumption in large storage arrays. The device's write leveling and dynamic ODT features ensure signal integrity in high-speed interfaces, which is essential for reliable data transfer. The FBGA package allows for compact controller designs, and the RoHS compliance meets environmental standards for data center equipment.
Recommended
High-Performance Computing
In HPC systems, the H5AN8G6NAFR provides the memory bandwidth needed for complex simulations and data analysis. Its 2400 MT/s data rate and 8Gb density support large working sets, while the 1.2V supply reduces power in high-density compute nodes. The device's CRC and write leveling features enhance data integrity in high-speed links, which is critical for long-running computations. The FBGA package enables high-density memory modules, and the device's thermal characteristics are suitable for air-cooled HPC environments.
Recommended
Embedded Systems
The H5AN8G6NAFR is suitable for high-end embedded systems such as industrial PCs and medical imaging equipment. Its 8Gb density provides ample memory for complex applications, and the 1.2V supply is compatible with low-power embedded processors. The device's wide operating temperature range (0°C to +85°C) ensures reliability in industrial environments. The FBGA package allows for compact designs, and the device's low power consumption extends battery life in portable embedded systems.
Recommended
Consumer Electronics
In high-end consumer devices like gaming PCs and workstations, the H5AN8G6NAFR delivers the memory performance needed for demanding applications. Its 2400 MT/s speed and 8Gb density support smooth multitasking and gaming, while the 1.2V supply reduces power consumption and heat. The device's auto self-refresh and dynamic ODT features improve reliability and signal integrity, which is important for overclocking scenarios. The FBGA package enables slim laptop designs, and the RoHS compliance meets consumer electronics regulations.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G6NAFR — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC | H5AN8G6NDJR | MT40A512M16JY-075E | K4A8G165WB-BCWE | AS4C512M16D4A-62BCN |
|---|---|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics | Alliance Memory |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate | 2400 MT/s | 2400 MT/s | [DATA_NEEDED: data rate] | [DATA_NEEDED: data rate] | 2400 MT/s | 2400 MT/s | 2400 MT/s |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- High density 8Gb in x16 organization (vs MT40A512M16JY-075E)
- Low 1.2V supply voltage (vs K4A8G165WB-BCWE)
- Wide operating temperature range (vs AS4C512M16D4A-62BCN)
Design Notes
Ensure stable power supply to VDD and VDDQ pins. Use 0.1uF and 1uF decoupling capacitors placed as close as possible to each power pin. The 1.2V supply should be clean and well-regulated to avoid data corruption.
Follow DDR4 layout guidelines for impedance matching and signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within the specified skew limits to ensure reliable operation at 2400 MT/s.
The H5AN8G6NAFR operates up to +85°C. Ensure adequate airflow or heatsinking in high-density designs. Monitor the temperature sensor and adjust refresh rate if necessary to maintain data integrity.
Compliance Information
Lead-free and halogen-free per datasheet description. RoHS compliant. Not AEC-Q100 qualified.
