H5AN8G6NDJR vs H5AN8G6NCJR-XXC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and H5AN8G6NCJR-xxC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NCJR-xxC
H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
H5AN8G6NCJR-xxC β ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR | H5AN8G6NCJR-xxC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $6.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) | 2666 Mbps (VKC speed grade) |
| Supply Voltage | 1.2 V | β |
| Package | 96-ball FBGA (13mm x 7.5mm) | 96-ball FBGA |
| Number of Terminals | 96 | β |
| Maximum Supply Voltage (Vsup) | 1.26 V | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Burst Length | 8 (BL8), 4 (BC4) | 8, 4 (with burst chop) |
| CAS Latency | 22 cycles (at 3200 Mbps) | β |
| Access Mode | Multi Bank Page Burst | β |
| JESD-30 Code | R-PBGA-B96 | β |
| RoHS | Compliant | Compliant |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | β |
| Supply Voltage (VDD) | β | 1.2 V |
| VPP Supply | β | 2.5 V |
| Operating Temperature (TC) | β | 0Β°C to 95Β°C |
| Number of Banks | β | 8 |
| On-Die Termination (ODT) | β | Supported |
| Self-Refresh | β | Temperature-compensated (TCSR) |
| Lead-Free | β | Yes |
| Mounting Type | β | Surface Mount |