H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
MPN: H5AN8G6NCJR-xxC β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
Drop-in alternatives for H5AN8G6NCJR-xxC β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
H5AN8G6NDJR-xxC
β Drop-Inπ Reference alternative (not in catalog)
H5AN8G8NCJR-xxC
β Drop-Inπ Reference alternative (not in catalog)
H5AN8G4NCJR-xxC
β Drop-Inβ 99,999 In Stock
$8.5 / Unit
View Datasheet βH5AN8G6NAFR-xxC
β Drop-Inπ Reference alternative (not in catalog)
MT41K256M16HA-125:E
β Drop-Inβ 99,999 In Stock
$3.1 / Unit
View Datasheet βK4B4G1646D-BYK00
β Drop-Inβ 99,999 In Stock
$7.5 / Unit
View Datasheet βH5AN8G6NCJR-xxC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gb |
| Organization | 512M x 16 |
| Data Rate | 2666 Mbps (VKC speed grade) |
| Supply Voltage (VDD) | 1.2 V |
| VPP Supply | 2.5 V |
| Operating Temperature (TC) | 0Β°C to 95Β°C |
| Package | 96-ball FBGA |
| Number of Banks | 8 |
| Burst Length | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | Supported |
| Self-Refresh | Temperature-compensated (TCSR) |
| RoHS | Compliant |
| Lead-Free | Yes |
| Mounting Type | Surface Mount |
H5AN8G6NCJR-xxC Pin Configuration
| Pin A1 | VDD β Power supply (1.2V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data input/output 2 |
| Pin B3 | DQ3 β Data input/output 3 |
| Pin C1 | VDDQ β Data power supply (1.2V) |
| Pin C2 | DQS_t β Data strobe (true) |
| Pin C3 | DQS_c β Data strobe (complement) |
| Pin D1 | VSSQ β Data ground |
| Pin D2 | CK_t β Clock (true) |
| Pin D3 | CK_c β Clock (complement) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN8G6NCJR-xxC is suitable for 6 applications: Server Main Memory, Desktop and Laptop RAM, Networking Equipment, Embedded Systems, High-Performance Computing, Consumer Electronics.
Server Main Memory
The H5AN8G6NCJR-xxC provides 8Gb density and 2666 Mbps bandwidth, making it ideal for server DIMM modules. Its high capacity supports virtualization, cloud computing, and large-scale data processing. The 1.2V operation reduces power consumption in data centers, while the 96-ball FBGA package enables high-density module designs. When used in RDIMMs or LRDIMMs, it delivers the performance needed for enterprise workloads.
Recommended
Desktop and Laptop RAM
The H5AN8G6NCJR-xxC is used in SO-DIMM and UDIMM modules for consumer computing. Its 8Gb density allows 16GB modules with 16 devices, and the 2666 Mbps speed supports modern CPUs. The low 1.2V supply reduces heat generation, making it suitable for compact laptops. The x16 organization simplifies module design by reducing the number of devices needed for a 64-bit data bus.
Recommended
Networking Equipment
In routers, switches, and network appliances, the H5AN8G6NCJR-xxC provides high-bandwidth memory for packet buffering and routing tables. Its 2666 Mbps data rate ensures fast processing of network traffic, while the 8Gb density supports large forwarding databases. The device's synchronous operation with both clock edges enables efficient data transfer in high-speed networking applications.
Recommended
Embedded Systems
For high-performance embedded systems such as industrial PCs and edge computing devices, the H5AN8G6NCJR-xxC offers the density and bandwidth needed for real-time data processing. Its wide operating temperature range (0Β°C to 95Β°C) allows use in harsh environments. The 96-ball FBGA package is suitable for compact PCB designs, and the low power consumption is beneficial for power-constrained applications.
Recommended
High-Performance Computing
The H5AN8G6NCJR-xxC is used in HPC systems where large memory capacity and high bandwidth are critical. Its 8Gb density allows building large memory pools, and the 2666 Mbps speed supports compute-intensive workloads like scientific simulations and AI training. The device's on-die termination and programmable latencies enable fine-tuning for maximum performance in multi-channel memory architectures.
Recommended
Consumer Electronics
In high-end consumer devices such as gaming consoles and smart TVs, the H5AN8G6NCJR-xxC provides the memory bandwidth for smooth graphics and multitasking. Its 8Gb density supports large application footprints, and the 1.2V operation helps manage thermal budgets. The x16 organization is ideal for applications requiring a wide data bus, such as integrated graphics.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G6NCJR-xxC β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G6NDJR-xxC | H5AN8G8NCJR-xxC | MT41K256M16HA-125:E |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 4 Gb |
| Organization | 512M x 16 | 512M x 16 | 1G x 8 | 256M x 16 |
| Data Rate | 2666 Mbps | 2666 Mbps | 2666 Mbps | 2400 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0Β°C to 95Β°C | 0Β°C to 95Β°C | 0Β°C to 95Β°C | 0Β°C to 95Β°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Higher density than some alternatives (vs MT41K256M16HA-125:E)
- Wider data bus (x16) (vs H5AN8G8NCJR-xxC)
- Higher data rate (vs MT41K256M16HA-125:E)
Design Notes
Ensure stable 1.2V VDD and 2.5V VPP supplies. Use low-ESR decoupling capacitors (e.g., 0.1uF and 1uF) placed close to each VDD and VDDQ pin. The VPP supply is critical for wordline boost; inadequate decoupling can cause write failures.
Follow the PCB layout guidelines in the SK Hynix datasheet for DDR4 routing. Maintain controlled impedance for DQ, DQS, and clock signals (typically 40-50 ohms single-ended). Keep trace lengths matched within +/- 10 mils for data groups to ensure signal integrity at 2666 Mbps.
The device operates up to 95Β°C TC. In high-density modules, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 96-ball FBGA package has a thermal resistance of approximately 20Β°C/W; calculate power dissipation based on operating conditions.
Compliance Information
RoHS compliant per SK Hynix datasheet. AEC-Q100 not applicable for memory components.
