H5AN8G8NAFR-VKC vs H5AN8G8NAFR-RDC Comparison

Detailed side-by-side comparison of H5AN8G8NAFR-VKC by SK hynix and H5AN8G8NAFR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G8NAFR-VKC H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC ✓ Active
SK hynix
H5AN8G8NAFR-RDC H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC ✓ Active

Specification Comparison

Parameter H5AN8G8NAFR-VKC H5AN8G8NAFR-RDC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.15 $2.95
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gbit
Organization 1G x 8 1G x 8 (x8)
Speed Grade DDR4-2666 (VKC bin) -RDC (DDR4-2666 class)
Supply Voltage (VDD) 1.2 V —
Interface SSTL12 DDR4 (Double Data Rate 4)
Burst Length 8 (BL8) 8 (BL8)
Bank Group Architecture Supported (per DDR4 JEDEC architecture) —
On-Die Termination (ODT) Yes —
DLL Yes (DLL for output skew control) —
Package 78-ball FBGA 78-ball FBGA
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature range]
RoHS Status Compliant (Lead-Free & Halogen-Free) Compliant
Process Technology CMOS —
Recommended Application Main memory requiring large density and high bandwidth —
Data Rate — 2666 MT/s (per -R speed grade suffix)
Core Supply Voltage (VDD) — 1.2 V
I/O Supply Voltage (VDDQ) — 1.2 V
Wordline Supply (VPP) — 2.5 V
Banks / Bank Groups — 16 banks / 4 bank groups (DDR4 8Gb architecture)
CAS Latency — [DATA_NEEDED: CAS Latency]
Lead-Free — Yes
Halogen Free — Yes
Datasheet Revision — Rev. 1.2 / Jul. 2017

Datasheets & Resources

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