H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix
MPN: H5AN8G8NAFR-RDC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.95 | $39.50 |
| 100 | $3.55 | $355.00 |
| 500 | $3.2 | $1,600.00 |
| 1,000 | $2.95 | $2,950.00 |
Drop-in alternatives for H5AN8G8NAFR-RDC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
H5AN8G8NAFR-PBC
✅ Drop-In✓ In Stock
$2.2 / Unit
View Datasheet →H5AN8G8NAFR-TFC
✅ Drop-In📋 Reference alternative (not in catalog)
H5AN8G8NAFR-UHC
✅ Drop-In✓ In Stock
Contact for price
View Datasheet →H5AN8G8NMFR-TFC
✅ Drop-In📋 Reference alternative (not in catalog)
MT40A1G8AG-062E
✅ Drop-In✓ In Stock
$3.1 / Unit
View Datasheet →K4A8G085WC-BCRC
✅ Drop-In✓ In Stock
$4.3 / Unit
View Datasheet →H5AN8G8NAFR-RDC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gbit |
| Organization | 1G x 8 (x8) |
| Interface | DDR4 (Double Data Rate 4) |
| Speed Grade | -RDC (DDR4-2666 class) |
| Data Rate | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | 1.2 V |
| I/O Supply Voltage (VDDQ) | 1.2 V |
| Wordline Supply (VPP) | 2.5 V |
| Banks / Bank Groups | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | 8 (BL8) |
| Package | 78-ball FBGA |
| Mounting Type | Surface Mount |
| Lead-Free | Yes |
| Halogen-Free | Yes |
| RoHS Status | Compliant |
| Datasheet Revision | Rev. 1.2 / Jul. 2017 |
H5AN8G8NAFR-RDC 78-ball fbga Pin Configuration Guide
Complete pinout information for H5AN8G8NAFR-RDC (78-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5AN8G8NAFR-RDC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN8G8NAFR-RDC is suitable for 6 applications: PC Client and SODIMM Main Memory, Server RDIMM and ECC Memory, Networking and Telecom Line Cards, Embedded and Industrial Motherboards, Set-Top Box and Smart TV Platforms, Test, Measurement, and Data Acquisition Systems.
PC Client and SODIMM Main Memory
The H5AN8G8NAFR-RDC provides 8Gb of main memory per device for notebook, mini-PC, and SODIMM assemblies. With x8 organization, eight devices build a 64-bit non-ECC 8GB rank; nine devices add SECDED ECC. Its DDR4-2666-class -RDC speed grade matches mainstream client controller training profiles, while the 1.2V VDD/VDDQ interface cuts I/O power relative to DDR3 by roughly 20% at comparable bandwidth. Designers place the devices on fly-by-routed command/address nets with on-die termination (ODT) absorbing reflections, and use the 2.5V VPP rail for wordline pumping. The trade-off versus lower-density parts is higher per-device idle current, so S3/S0ix power gating and CKE management become mandatory in battery-operated platforms.
Recommended
Server RDIMM and ECC Memory
In registered server modules, the x8 organization of the H5AN8G8NAFR-RDC enables single-device data correction (SDDC): nine x8 chips form a 72-bit ECC rank that survives an entire device failure. The DDR4 bank-group architecture delivers interleaved 2666 MT/s bandwidth per rank that registered clock drivers can sustain across dual-rank modules. Engineers mount the 78-ball FBGA devices with fly-by CA routing and per-pin length matching for DQ/DQS groups, then encode speed bin, ranks, and manufacturer data into SPD EEPROM for the BIOS memory-training engine. Because DDR4 training is vendor-sensitive, qualifying a second source such as MT40A1G8AG-062E on the same footprint protects server production against DRAM allocation swings.
Recommended
Networking and Telecom Line Cards
Switch, router, and 5G baseband line cards use the H5AN8G8NAFR-RDC as packet-buffer and lookup-table memory, where 8Gb density supports deep burst buffers at high throughput. The device's BL8 burst and four-bank-group structure sustain sustained sequential bandwidth suitable for QoS queuing engines reading and writing concurrently. Boards typically run the DRAM at 1.2V with careful stackup design (low-loss dielectric, reference planes) to meet DDR4-2666 eye masks at line-card temperatures. Because telecom equipment demands long service life, the RoHS-compliant, Lead-Free and Halogen-Free construction simplifies environmental compliance, and designers should verify the -RDC commercial temperature classification against their board-level ambient specification before release.
Recommended
Embedded and Industrial Motherboards
Industrial PCs, medical instruments, and factory HMI controllers integrate the H5AN8G8NAFR-RDC to obtain 8GB+ of main memory in compact footprints without SO-DIMM sockets. The 78-ball FBGA survives vibration profiles that defeat edge connectors, and the 1.2V signaling reduces EMI relative to DDR3 designs. Memory controllers in embedded SoCs (ARM/Intel embedded lines) provide DDR4 training with vendor-specific MR values, so qualification should include the SK hynix H5AN8G8NAFR dataset plus a cross-brand drop-in. Designers must implement the JEDEC power-up sequence with VPP-before-VDD ordering and RESET# held low through rail ramp, then budget refresh current in thermally enclosed enclosures where 85C-class ambient limits apply.
Recommended
Set-Top Box and Smart TV Platforms
Digital set-top boxes and 4K smart-TV SoCs use the H5AN8G8NAFR-RDC for multi-stream video buffering, graphics frame buffers, and conditional-access workloads that exceed what stacked-package memory can supply. A single 8Gb x8 device gives 1GB on one footprint; two devices cover mainstream 2GB BOMs. The DDR4-2666-class interface provides the bandwidth headroom for simultaneous 4K decode and UI composition, while CKE clock gating minimizes idle power for energy-star compliance. Consumer platforms value the RoHS-compliant Lead-Free/Halogen-Free construction for global certification. Layout teams should keep DQS/DQ length matching within DDR4-2666 skew budgets and place 0.1uF plus 10uF decoupling per device on the 1.2V VDDQ plane to control simultaneous-switching noise.
Recommended
Test, Measurement, and Data Acquisition Systems
High-speed oscilloscopes, logic analyzers, and data-acquisition instruments use the H5AN8G8NAFR-RDC as deep capture memory, streaming ADC samples into 8Gb-deep buffers. The device's high sequential write bandwidth at 2666 MT/s class matches multi-GSPS sample streams after demultiplexing, and BL8 bursts align naturally with burst-buffer write scheduling. Instruments demand deterministic latency, so designers disable controller prefetch speculation or account for refresh (tRFC) stalls in trigger-alignment firmware. The 78-ball FBGA withstands the thermal cycling of rack environments, and the 1.2V interface simplifies power-tree design alongside modern FPGA platforms. Qualify both SK hynix and cross-brand drop-ins (MT40A1G8AG-062E) to de-risk long instrument production lifecycles against DRAM EOL events.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G8NAFR-RDC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G8NAFR-PBC | H5AN8G8NAFR-UHC | MT40A1G8AG-062E | K4A8G085WC-BCRC |
|---|---|---|---|---|---|
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | x8 | x8 | x8 | x8 | x8 |
| Interface / Class | DDR4 | DDR4 | DDR4 | DDR4 | DDR4 |
| Speed Class | -RDC (DDR4-2666 class) | -PBC speed bin [DATA_NEEDED] | -UHC (DDR4-2400 class) | -062E (DDR4-2666 class) | -BCRC (DDR4-2666 class) |
| Core Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| CAS Latency | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS / Lead-Free / Halogen-Free | Compliant / Yes / Yes | Compliant (family datasheet) | Compliant (family datasheet) | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Highest-speed suffix in the N-die NAFR x8 family (vs H5AN8G8NAFR-UHC)
- JEDEC cross-brand pin compatibility (vs MT40A1G8AG-062E)
- Lead-Free, Halogen-Free, RoHS-compliant construction (vs H5AN8G8NMFR-TFC)
Design Notes
The H5AN8G8NAFR-RDC requires three rails: VPP 2.5V, VDD 1.2V, and VDDQ 1.2V. Follow the JEDEC DDR4 power-up order: VPP before or with VDD/VDDQ, and hold RESET# low through rail ramp until all supplies are stable. Estimated: at DDR4-2666-class operation a single 8Gb device can draw roughly 300-500 mA peak on VDDQ during bank-group interleaved bursts (verify with the datasheet IDD tables on page 31), so budget the 1.2V VRM with margin and decouple with bulk 100uF plus per-device 0.1uF/10uF ceramics.
Route DQ/DQS/DM as length-matched groups with on-die termination enabled; keep DQS-to-DQ skew within the DDR4-2666-class setup/hold budget. For multi-device loads (DIMM-style), use fly-by routing on clock, command, and address with ODT compensating for the transmission-line taper. Place the ZQ calibration resistor (240 ohm, 1%) within 5 mm of the ZQ ball with a solid ground return. Reference all high-speed nets to an unbroken ground plane and avoid splitting the reference under DQ groups.
Do not issue MRS commands before supply stabilization or release RESET# early - these are the two most frequent DDR4 bring-up failures. Do not mix speed grades on a shared bus without configuring the controller for the slower bin. Note the -RDC 'D' temperature classification: confirm it matches your board's worst-case ambient before selecting this suffix for enclosed or industrial products. Finally, DDR4 training is vendor-sensitive; if you substitute a Micron or Samsung drop-in, re-run memory training and validate the full MR programming set.
Compliance Information
Lead-Free & Halogen-Free (RoHS Compliant) per SK hynix H5AN8G8NAFR-RDC datasheet description. REACH and conflict-minerals status not stated in provided data. AEC-Q100 qualification not stated - assume commercial grade only.
