H5TC4G63AFR-PBA vs NT5CC256M16CP-DI Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBA by SK hynix and NT5CC256M16CP-DI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5TC4G63AFR-PBA | NT5CC256M16CP-DI |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.98 | $2.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Data Rate | 1866 Mbps (PC3L-14900) | — |
| Package | 96-ball FBGA | VFBGA-96 |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8, 4 |
| CAS Latency (CL) | 11, 12, 13 | 5, 6, 7, 8, 9, 10, 11 |
| Operating Temperature Range | 0°C to +95°C (Tcase) | — |
| Interface | 16-bit I/O | Differential clock (CK, CK#) |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Total Density | — | 4Gb |
| Supply Voltage | — | 1.35V (1.283V to 1.45V) |
| Speed Grade | — | DDR3-1600 (CL11) |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Internal Banks | — | 8 |
| Operating Temperature | — | 0C to +95C (Tc) [DATA_NEEDED: exact range] |
| On-Die Termination | — | Yes (programmable) |
| Process Technology | — | 70nm |