H5TQ4G63AFR-H9C vs H5TC4G63AFR-PBA Comparison

Detailed side-by-side comparison of H5TQ4G63AFR-H9C by SK hynix and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TQ4G63AFR-H9C H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix

H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix

H5TQ4G63AFR-H9C βœ“ Active
SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA βœ“ Active

Specification Comparison

Parameter H5TQ4G63AFR-H9C H5TC4G63AFR-PBA
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $3.98
Memory Type DDR3 SDRAM DDR3L SDRAM
Density 4 Gb 4Gb
Organization 256M x 16 256M x 16
Supply Voltage 1.5 V β€”
Clock Speed (tCK) 0.255 ns β€”
Package 96-ball TFBGA 96-ball FBGA
Package Shape RECTANGULAR β€”
Refresh Cycles 8192 β€”
Number of Terminals 96 β€”
Temperature Grade OTHER β€”
RoHS Compliant Compliant
Halogen Free Yes β€”
Mounting Type Surface Mount β€”
Data Rate 3.9 Gbps per pin (approx) 1866 Mbps (PC3L-14900)
Ball Pitch 0.8 mm 0.8mm
Supply Voltage (VDD/VDDQ) β€” 1.35V
Number of Banks β€” 8
Burst Length β€” 8 and 4 (with burst chop)
CAS Latency (CL) β€” 11, 12, 13
Operating Temperature Range β€” 0Β°C to +95Β°C (Tcase)
Interface β€” 16-bit I/O
On-Die Termination (ODT) β€” Yes
ZQ Calibration β€” Yes
Write Leveling β€” Yes
Auto Self-Refresh β€” Yes
Partial Array Self-Refresh β€” Yes

Datasheets & Resources

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